Idioma:

Optical and structural analysis of porous silicon coated with GZO films using rf magnetron sputtering

Prabakaran, R. ; Monteiro, T. ; Peres, M. ; Viana, A.S. ; da Cunha, A.F. ; Águas, H. ; Gonçalves, A. ; Fortunato, E. ; Martins, R. ; Ferreira, I.

Thin solid films, 2007-10, Vol.515 (24), p.8664-8669 [Periódico revisado por pares]

Lausanne: Elsevier B.V

Texto completo disponível

Citações Citado por

Enviar para

Título:
Optical and structural analysis of porous silicon coated with GZO films using rf magnetron sputtering
Autor: Prabakaran, R. ; Monteiro, T. ; Peres, M. ; Viana, A.S. ; da Cunha, A.F. ; Águas, H. ; Gonçalves, A. ; Fortunato, E. ; Martins, R. ; Ferreira, I.
Assuntos: Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; Electronics ; Exact sciences and technology ; Gallium zinc oxide ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optoelectronic devices ; Photoluminescence ; Physics ; Porous silicon ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; XRD
É parte de: Thin solid films, 2007-10, Vol.515 (24), p.8664-8669
Descrição: In the production of porous silicon (PS) to optoelectronic application one of the most significant constrains is the surface defects passivation. In the present work we investigate, gallium-doped zinc oxide (GZO) thin films deposited by rf magnetron sputtering at room temperature on PS obtained with different etching times. The X-ray diffraction (XRD), Fourier transform infrared (FTIR) and atomic force microscopy (AFM) analysis have been carried out to understand the effect of GZO films coating on PS. Further, the XRD analysis suggests the formation of a good crystalline quality of the GZO films on PS. From AFM investigation we observe that the surface roughness increases after GZO film coating. The photoluminescence (PL) measurements on PS and GZO films deposited PS shows three emission peaks at around 1.9 eV (red-band), 2.78 eV (blue-band) and 3.2 eV (UV-band). PL enhancement in the blue and ultraviolet (UV) region has been achieved after GZO films deposition, which might be originated from a contribution of the near-band-edge recombination from GZO.
Editor: Lausanne: Elsevier B.V
Idioma: Inglês

Links

View record in Pascal Francis

Voltar para lista de resultados

Anterior Resultado 2 Avançar Ir para próxima página

Realização: Logos de Redes Sociais:

Optical and structural analysis of porous silicon coated with GZO films using rf magnetron sputtering

Prabakaran, R. ; Monteiro, T. ; Peres, M. ; Viana, A.S. ; da Cunha, A.F. ; Águas, H. ; Gonçalves, A. ; Fortunato, E. ; Martins, R. ; Ferreira, I.

Lausanne: Elsevier B.V

Buscando em bases de dados remotas. Favor aguardar.