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Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

Higashiwaki, Masataka ; Sasaki, Kohei ; Kamimura, Takafumi ; Hoi Wong, Man ; Krishnamurthy, Daivasigamani ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu

Applied physics letters, 2013-09, Vol.103 (12) [Periódico revisado por pares]

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Título:
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Autor: Higashiwaki, Masataka ; Sasaki, Kohei ; Kamimura, Takafumi ; Hoi Wong, Man ; Krishnamurthy, Daivasigamani ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu
É parte de: Applied physics letters, 2013-09, Vol.103 (12)
Descrição: Single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors were fabricated on a semi-insulating β-Ga2O3 (010) substrate. A Sn-doped n-Ga2O3 channel layer was grown by molecular-beam epitaxy. Si-ion implantation doping was performed to source and drain electrode regions for obtaining low-resistance ohmic contacts. An Al2O3 gate dielectric film formed by atomic layer deposition passivated the device surface and significantly reduced gate leakage. The device with a gate length of 2 μm showed effective gate modulation of the drain current with an extremely low off-state drain leakage of less than a few pA/mm, leading to a high drain current on/off ratio of over ten orders of magnitude. A three-terminal off-state breakdown voltage of 370 V was achieved. Stable transistor operation was sustained at temperatures up to 250 °C.
Idioma: Inglês

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