0.15 μm electron beam direct writing for Gbit dynamic random access memory fabrication

NAKAJIMA, K ; YAMASHITA, H ; NOZUE, H ; KOJIMA, Y ; HIRASAWA, S ; TAMURA, T ; YAMADA, Y ; TOKUNAGA, K ; EMA, T ; KONDOH, K ; ONODA, N

Japanese journal of applied physics, 1997-12, Vol.36 (12B), p.7535-7540 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

Texto completo disponível