Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing

Dashiell, M.W. ; Troeger, R.T. ; Rommel, S.L. ; Adam, T.N. ; Berger, P.R. ; Guedj, C. ; Kolodzey, J. ; Seabaugh, A.C. ; Lake, R.

IEEE transactions on electron devices, 2000-09, Vol.47 (9), p.1707-1714 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível