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CMOS BEOL-embedded z-axis accelerometer

Michalik, P ; Sánchez-Chiva, J.M ; Fernández, D ; Madrenas, J

Electronics letters, 2015-05, Vol.51 (11), p.865-867 [Periódico revisado por pares]

The Institution of Engineering and Technology

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Título:
CMOS BEOL-embedded z-axis accelerometer
Autor: Michalik, P ; Sánchez-Chiva, J.M ; Fernández, D ; Madrenas, J
Assuntos: Acceleration ; accelerometers ; Aceleròmetres ; Aparells i instruments ; back‐end‐of‐line ; bandwidth 0.25 Hz to 100 Hz ; Capacitance ; capacitance 50 fF ; CMOS BEOL embedded z‐axis accelerometer ; CMOS integrated acceleration sensor ; CMOS integrated circuits ; complementary metal oxide semiconductor ; Electric engineering ; Electrodes ; Electrònica ; Enginyeria electrònica ; Etching ; frequency 20 kHz ; integrated circuit interconnection stack ; integrated circuit interconnections ; intermetal dielectric ; isotropic IMD etching ; Metal oxide semiconductors ; metal‐via‐metal stack ; microsensors ; Semiconductor technology ; Semiconductors ; size 135 mum ; size 8 mum ; Stacks ; Substrates ; Àrees temàtiques de la UPC
É parte de: Electronics letters, 2015-05, Vol.51 (11), p.865-867
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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Descrição: A first reported complementary metal-oxide semiconductor (CMOS)-integrated acceleration sensor obtained through isotropic inter-metal dielectric (IMD) etching of a back-end-of-line (BEOL) integrated circuit interconnection stack, without any additional substrate etching steps, is presented. The mechanical device composed of a CMOS-process 8 μm-thick metal-via-metal stack of 135 μm diameter and suspended 2.5 μm over a bottom fixed electrode, has a resonance frequency of 20 kHz, a sensing capacitance of 50 fF with sensitivity 14 aF/G and it is integrated on the same substrate with a simple low-noise amplifier reaching 25 mG of RMS noise measured from 0.25 to 100 Hz bandwidth.
Editor: The Institution of Engineering and Technology
Idioma: Inglês

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CMOS BEOL-embedded z-axis accelerometer

Michalik, P ; Sánchez-Chiva, J.M ; Fernández, D ; Madrenas, J

The Institution of Engineering and Technology

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