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Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing

Kim, Yeongkwon ; Jeon, Seung-Bae ; Jang, Byung Chul

Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (4), p.710 [Periódico revisado por pares]

Switzerland: MDPI AG

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Título:
Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing
Autor: Kim, Yeongkwon ; Jeon, Seung-Bae ; Jang, Byung Chul
Assuntos: Artificial intelligence ; Boolean ; Climate change ; Computer architecture ; Computer centers ; Computer memory ; Current voltage characteristics ; Energy consumption ; Functional groups ; Gates ; Gates (circuits) ; Graphene ; graphene oxide ; Graphite ; in-memory computing ; Internet of Things ; Logic ; Logic circuits ; logic-in-memory circuit ; Low resistance ; memristor ; Memristors ; Nanoelectronics ; Switching ; Temperature dependence ; Transmission electron microscopy
É parte de: Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (4), p.710
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previously reported, the logic architecture requiring additional components and the non-uniform switching of memristor have restricted demonstrations to simple gates. Using a nanoscale graphene oxide (GO) nanosheets-based memristor, we demonstrate the feasibility of a non-volatile logic-in-memory circuit that enables normally-off in-memory computing. The memristor based on GO film with an abundance of unusual functional groups exhibited unipolar resistive switching behavior with reliable endurance and retention characteristics, making it suitable for logic-in-memory circuit application. In a state of low resistance, temperature-dependent resistance and I-V characteristics indicated the presence of a metallic Ni filament. Using memristor-aided logic (MAGIC) architecture, we performed NOT and NOR gates experimentally. Additionally, other logic gates such as AND, NAND, and OR were successfully implemented by combining NOT and NOR universal logic gates in a crossbar array. These findings will pave the way for the development of next-generation computer systems beyond the von Neumann architecture, as well as carbon-based nanoelectronics in the future.
Editor: Switzerland: MDPI AG
Idioma: Inglês

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Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing

Kim, Yeongkwon ; Jeon, Seung-Bae ; Jang, Byung Chul

Switzerland: MDPI AG

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