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HfO[sub.x]/Ge RRAM with High ON/OFF Ratio and Good Endurance

Wei, Na ; Ding, Xiang ; Gao, Shifan ; Wu, Wenhao ; Zhao, Yi

Electronics (Basel), 2022-11, Vol.11 (22) [Periódico revisado por pares]

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Título:
HfO[sub.x]/Ge RRAM with High ON/OFF Ratio and Good Endurance
Autor: Wei, Na ; Ding, Xiang ; Gao, Shifan ; Wu, Wenhao ; Zhao, Yi
Assuntos: Circuit design ; Design and construction ; Materials ; Methods ; Random access memory
É parte de: Electronics (Basel), 2022-11, Vol.11 (22)
Descrição: A trade-off between the memory window and the endurance exists for transition-metal-oxide RRAM. In this work, we demonstrated that HfO[sub.x] /Ge-based metal-insulator-semiconductor RRAM devices possess both a larger memory window and longer endurance compared with metal-insulator-metal (MIM) RRAM devices. Under DC cycling, HfO[sub.x] /Ge devices exhibit a 100× larger memory window compared to HfO[sub.x] MIM devices, and a DC sweep of up to 20,000 cycles was achieved with the devices. The devices also realize low static power down to 1 nW as FPGA’s pull-up/pull-down resistors. Thus, HfO[sub.x] /Ge devices act as a promising candidates for various applications such as FPGA or compute-in-memory, in which both a high ON/OFF ratio and decent endurance are required.
Editor: MDPI AG
Idioma: Inglês

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