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Wet Metallization of High Aspect Ratio TSV Using Electrografted Polymer Insulator to Suppress Residual Stress in Silicon

Dequivre, Thomas ; Kolhatkar, Gitanjali ; Hadj Youssef, Azza ; Le, Xuan T. ; Brisard, Gessie M. ; Ruediger, Andreas ; Charlebois, Serge A.

IEEE transactions on device and materials reliability, 2017-09, Vol.17 (3), p.514-521 [Periódico revisado por pares]

IEEE

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Título:
Wet Metallization of High Aspect Ratio TSV Using Electrografted Polymer Insulator to Suppress Residual Stress in Silicon
Autor: Dequivre, Thomas ; Kolhatkar, Gitanjali ; Hadj Youssef, Azza ; Le, Xuan T. ; Brisard, Gessie M. ; Ruediger, Andreas ; Charlebois, Serge A.
Assuntos: Copper ; Dielectric ; electrografting ; electronic packaging ; Engineering Sciences ; Insulators ; isolation technology ; keep out zone ; microfabrication ; polymer films ; Polymers ; Residual stresses ; Silicon ; stress measurement ; three-dimensional integrated ; Through-silicon vias
É parte de: IEEE transactions on device and materials reliability, 2017-09, Vol.17 (3), p.514-521
Descrição: Through-silicon-vias (TSV) are the key to 3-D integrated microsystems. Their fabrication leads to reliability issues linked to the thermo-mechanical stress induced in the silicon around the vias. In this paper, we propose reducing the silicon residual stress in high aspect ratio copper TSVs (HAR TSV) using an electrografted polymer insulator, poly-4-vinylpyridine (P4VP), to replace the traditional silicon oxide layer. We use Raman spectroscopy to make the first investigation of the residual stress in the Si around P4VP-insulated TSVs and compare it to SiO 2 -insulated TSVs. The results show that P4VP acts as a stress buffer layer because of its particular mechanical properties as the measured residual stress in Si is significantly reduced at room temperature around the polymer insulated HAR TSVs. The potential benefits of such a technology are not only better thermo-mechanical reliability of a 3-D integrated microsystem but also greater integration density.
Editor: IEEE
Idioma: Inglês

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Wet Metallization of High Aspect Ratio TSV Using Electrografted Polymer Insulator to Suppress Residual Stress in Silicon

Dequivre, Thomas ; Kolhatkar, Gitanjali ; Hadj Youssef, Azza ; Le, Xuan T. ; Brisard, Gessie M. ; Ruediger, Andreas ; Charlebois, Serge A.

IEEE

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