Idioma:

Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes on p-type GaAs substrates grown by organometallic vapor phase epitaxy

Ota, Y ; Fujii, K ; Ito, Y ; Kawasaki, T ; Noguchi, K ; Tsuji, T ; Terai, Y ; Fujiwara, Y

IOP conference series. Materials Science and Engineering, 2009-02, Vol.1 (1), p.012022-4 [Periódico revisado por pares]

Bristol: IOP Publishing

Texto completo disponível

Citações Citado por

Enviar para

Título:
Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes on p-type GaAs substrates grown by organometallic vapor phase epitaxy
Autor: Ota, Y ; Fujii, K ; Ito, Y ; Kawasaki, T ; Noguchi, K ; Tsuji, T ; Terai, Y ; Fujiwara, Y
Assuntos: Current density ; Electroluminescence ; Emission analysis ; Energy transfer ; Epitaxial growth ; Gallium arsenide ; Gallium indium phosphide ; Heterostructures ; Lasers ; Metalorganic chemical vapor deposition ; Near infrared radiation ; Optical properties ; Semiconductor lasers ; Stimulated emission ; Substrates ; Threshold currents ; Vapor phase epitaxy ; Vapor phases
É parte de: IOP conference series. Materials Science and Engineering, 2009-02, Vol.1 (1), p.012022-4
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: Optical properties of GaInP/GaAs:Er,O/GaInP double heterostructure (DH) laser diodes (LDs) grown by organometallic vapor phase epitaxy (OMVPE) were investigated. The Er-doped LDs showed laser emission of the GaAs band-edge. The threshold current density (Jth) was 3.6 kA/cm2 on the n-type GaAs substrates and 15.8 kA/cm2 on the p-type at 77 K. The Er-doped LDs on the n-type substrate showed a strong sulfur (S)-related emission in the near-infrared region. Conversely, the S-related emission was strongly suppressed in the LDs on the p-type substrates. This was achieved by preventing the incorporation of S atoms into the GaAs active layer. For the electroluminescence (EL) properties, 1.54 μm-emission from Er3+ ions was clearly observed in the Er-doped LDs on p-type substrates. The dependence of EL intensities on the current density showed that the suppression of an energy transfer from the Er3+ ion to the S-related emission was necessary for efficient Er3+ emission at the stimulated emission region of the GaAs band-edge.
Editor: Bristol: IOP Publishing
Idioma: Inglês

Links

View record in IOP Publishing$$FView record in $$GIOP Publishing

Voltar para lista de resultados

Anterior Resultado 8 Avançar Ir para próxima página

Realização: Logos de Redes Sociais:

Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes on p-type GaAs substrates grown by organometallic vapor phase epitaxy

Ota, Y ; Fujii, K ; Ito, Y ; Kawasaki, T ; Noguchi, K ; Tsuji, T ; Terai, Y ; Fujiwara, Y

Bristol: IOP Publishing

Buscando em bases de dados remotas. Favor aguardar.