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Early Stages of Sn-Doped In2O3 Film Growth on Amorphous SiO2 Surfaces Observed by Atomic Force Microscopy and Transmission Electron Microscopy

Sato, Yasushi ; Oka, Nobuto ; Nakamura, Shin-ichi ; Shigesato, Yuzo

Jpn J Appl Phys, 2013-12, Vol.52 (12), p.128007-128007-3 [Periódico revisado por pares]

The Japan Society of Applied Physics

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  • Título:
    Early Stages of Sn-Doped In2O3 Film Growth on Amorphous SiO2 Surfaces Observed by Atomic Force Microscopy and Transmission Electron Microscopy
  • Autor: Sato, Yasushi ; Oka, Nobuto ; Nakamura, Shin-ichi ; Shigesato, Yuzo
  • É parte de: Jpn J Appl Phys, 2013-12, Vol.52 (12), p.128007-128007-3
  • Notas: (Color online) AFM images of (a) bare a-SiO 2 film surfaces and (b--d) surfaces of a-SiO 2 with ITO deposited for deposition times of 5 (b), 10 (c), and 15 (d) s. (Color online) Average roughness ($R_{\text{a}}$) of ITO-coated a-SiO 2 /NaCl surfaces estimated from AFM images ($1\times 1$ μm 2 ) as a function of the nominal thickness. The results of ITO-coated glass surface that are reported in our previous works are also presented. Plan-view TEM images of surfaces of a-SiO 2 with ITO deposited for (a) 5 and (b) 10 s, and the corresponding enlarged TEM images (c and d, respectively). (Color online) Schematic illustration of the early stages of ITO film growth on a-SiO 2 or glass surfaces: (a) bare a-SiO 2 or glass surface before ITO deposition, (b) formation of very small ITO islands (5--10 nm in diameter; nominal film thickness, ${<}3$ nm), (c) aggregation of the ITO islands into large ITO islands (15--30 nm in diameter; nominal film thickness, 3--6 nm), (d) coalescence of the large ITO islands, and (e) formation of a continuous film of ITO (nominal film thickness ${>}6$ nm).
  • Descrição: The early stages of Sn-doped In 2 O 3 (ITO) film growth on amorphous SiO 2 (a-SiO 2 ) surfaces were observed by atomic force microscopy (AFM) and transmission electron microscopy (TEM). AFM measurements clearly showed that the surface morphologies of the ITO films (3--6 nm in thickness) possessed an extended hill-and-valley structure. TEM analysis revealed that small ITO islands on the a-SiO 2 surface could aggregate, resulting in the formation of larger ITO islands approximately 15--30 nm in diameter. The combined results indicate that the ITO film growth on a-SiO 2 surfaces is similar to that on glass surfaces.
  • Editor: The Japan Society of Applied Physics
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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