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Lifetimes of hydrogen and deuterium related vibrational modes in silicon

Budde, M ; Lüpke, G ; Chen, E ; Zhang, X ; Tolk, N H ; Feldman, L C ; Tarhan, E ; Ramdas, A K ; Stavola, M

Physical review letters, 2001-10, Vol.87 (14), p.145501-145501 [Periódico revisado por pares]

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Título:
Lifetimes of hydrogen and deuterium related vibrational modes in silicon
Autor: Budde, M ; Lüpke, G ; Chen, E ; Zhang, X ; Tolk, N H ; Feldman, L C ; Tarhan, E ; Ramdas, A K ; Stavola, M
Assuntos: 08 HYDROGEN ; ABSORPTION SPECTROSCOPY ; BLEACHING ; DEFECTS ; DEUTERIUM ; HYDROGEN ; PHYSICS ; SILICON ; SPECTROSCOPY ; TRANSIENTS
É parte de: Physical review letters, 2001-10, Vol.87 (14), p.145501-145501
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
US
FG02-99ER45781
Descrição: Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we find that lifetimes of Si-D modes typically are longer than for the corresponding Si-H modes. The potential implications of the results on the physics of electronic device degradation are discussed.
Editor: United States: The American Physical Society
Idioma: Inglês

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