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Fast High-Responsivity Few-Layer MoTe2 Photodetectors

Octon, Tobias J. ; Nagareddy, V. Karthik ; Russo, Saverio ; Craciun, Monica F. ; Wright, C. David

Advanced optical materials, 2016-11, Vol.4 (11), p.1750-1754

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Título:
Fast High-Responsivity Few-Layer MoTe2 Photodetectors
Autor: Octon, Tobias J. ; Nagareddy, V. Karthik ; Russo, Saverio ; Craciun, Monica F. ; Wright, C. David
Assuntos: 2D materials ; fast photoresponse ; field-effect transistors ; molybdenum ditelluride ; Optics ; photodetection
É parte de: Advanced optical materials, 2016-11, Vol.4 (11), p.1750-1754
Notas: EPSRC - No. EP/L015331/1; No. EP/M015130/1
ark:/67375/WNG-3238P5CX-8
ArticleID:ADOM201600290
istex:20B110A42A85EAA9F6D7C98CAC7F654F2415948E
EPSRC Centre for Doctoral Training in Metamaterials - No. EP/L015331/1
Descrição: The transition metal dichalcogenide MoTe2 is fabricated into few‐layer field‐effect transistors that show hole conduction with a mobility of 2.04 V cm−2 s−1. Four‐layer MoTe2 devices have a high photoresponsivity of 6 A W−1 and a response time, at around 160 μs, over 100 times faster than previously reported, making them a strong candidate for high speed and high sensitivity photodetection.
Editor: Weinheim: Blackwell Publishing Ltd
Idioma: Inglês

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