Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures
de Vasconcellos Lourenço, R. ; Horenburg, P. ; Henning, P. ; Bremers, H. ; Rossow, U. ; Hangleiter, A.
AIP advances, 2024-04, Vol.14 (4), p.045122-045122-6 [Periódico revisado por pares]Melville: American Institute of Physics
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