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High Performance Multilayer MoS2 Transistors with Scandium Contacts

Das, Saptarshi ; Chen, Hong-Yan ; Penumatcha, Ashish Verma ; Appenzeller, Joerg

Nano letters, 2013-01, Vol.13 (1), p.100-105 [Revista revisada por pares]

Washington, DC: American Chemical Society

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Título:
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Autor: Das, Saptarshi ; Chen, Hong-Yan ; Penumatcha, Ashish Verma ; Appenzeller, Joerg
Materias: Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Contact resistance, contact potential ; Cross-disciplinary physics: materials science; rheology ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Electronics ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Materials science ; Molecular electronics, nanoelectronics ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Specific materials
Es parte de: Nano letters, 2013-01, Vol.13 (1), p.100-105
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descripción: While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2-D material can be harvested. Using scandium contacts on 10-nm-thick exfoliated MoS2 flakes that are covered by a 15 nm Al2O3 film, high effective mobilities of 700 cm2/(V s) are achieved at room temperature. This breakthrough is largely attributed to the fact that we succeeded in eliminating contact resistance effects that limited the device performance in the past unrecognized. In fact, the apparent linear dependence of current on drain voltage had mislead researchers to believe that a truly Ohmic contact had already been achieved, a misconception that we also elucidate in the present article.
Editor: Washington, DC: American Chemical Society
Idioma: Inglés

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High Performance Multilayer MoS2 Transistors with Scandium Contacts

Das, Saptarshi ; Chen, Hong-Yan ; Penumatcha, Ashish Verma ; Appenzeller, Joerg

Washington, DC: American Chemical Society

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