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The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

Choi, Sukwon ; Heller, Eric ; Dorsey, Donald ; Vetury, Ramakrishna ; Graham, Samuel

Journal of applied physics, 2013-10, Vol.114 (16) [Periódico revisado por pares]

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Título:
The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
Autor: Choi, Sukwon ; Heller, Eric ; Dorsey, Donald ; Vetury, Ramakrishna ; Graham, Samuel
Assuntos: Aluminum gallium nitrides
É parte de: Journal of applied physics, 2013-10, Vol.114 (16)
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors (HEMTs). This combined analysis was correlated with electrical step stress tests to determine the influence of mechanical stress on the degradation of actual devices under diverse bias conditions. It was found that the total stress as opposed to one dominant stress component correlated the best with the degradation of the HEMT devices. These results suggest that minimizing the total stress as opposed to the inverse piezoelectric stress in the device is necessary in order to avoid device degradation which can be accomplished through various growth methods.
Idioma: Inglês

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