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Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing

Gao, Qian ; Saxena, Dhruv ; Wang, Fan ; Fu, Lan ; Mokkapati, Sudha ; Guo, Yanan ; Li, Li ; Wong-Leung, Jennifer ; Caroff, Philippe ; Tan, Hark Hoe ; Jagadish, Chennupati

Nano letters, 2014-09, Vol.14 (9), p.5206-5211 [Periódico revisado por pares]

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Título:
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Autor: Gao, Qian ; Saxena, Dhruv ; Wang, Fan ; Fu, Lan ; Mokkapati, Sudha ; Guo, Yanan ; Li, Li ; Wong-Leung, Jennifer ; Caroff, Philippe ; Tan, Hark Hoe ; Jagadish, Chennupati
É parte de: Nano letters, 2014-09, Vol.14 (9), p.5206-5211
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.
Editor: United States: American Chemical Society
Idioma: Inglês

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