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Construction of an X-ray detecting module and its application to relative-sensitivity measurement using a silicon PIN diode in conjunction with short-decay-time scintillators

Nihei, Shinichi ; Sato, Eiichi ; Hamaya, Tatsuki ; Numahata, Wataru ; Kogita, Hayato ; Kami, Syouta ; Arakawa, Yumeka ; Oda, Yasuyuki ; Hagiwara, Osahiko ; Matsukiyo, Hiroshi ; Osawa, Akihiro ; Enomoto, Toshiyuki ; Watanabe, Manabu ; Kusachi, Shinya

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2014-12, Vol.767, p.193-198 [Periódico revisado por pares]

Elsevier B.V

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  • Título:
    Construction of an X-ray detecting module and its application to relative-sensitivity measurement using a silicon PIN diode in conjunction with short-decay-time scintillators
  • Autor: Nihei, Shinichi ; Sato, Eiichi ; Hamaya, Tatsuki ; Numahata, Wataru ; Kogita, Hayato ; Kami, Syouta ; Arakawa, Yumeka ; Oda, Yasuyuki ; Hagiwara, Osahiko ; Matsukiyo, Hiroshi ; Osawa, Akihiro ; Enomoto, Toshiyuki ; Watanabe, Manabu ; Kusachi, Shinya
  • Assuntos: Amplifiers ; Detectors ; Electric potential ; Event-pulse-height spectra ; LSO–Si-PIN diode ; Modules ; Relative-sensitivity measurement ; Si-PIN diode ; Tubes ; Volt-ampere characteristics ; Voltage ; X-ray detecting module ; YAP(Ce)–Si-PIN diode
  • É parte de: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2014-12, Vol.767, p.193-198
  • Notas: ObjectType-Article-1
    SourceType-Scholarly Journals-1
    ObjectType-Feature-2
    content type line 23
  • Descrição: To detect low-dose-rate X-rays, we have developed an X-ray-detecting module for semiconductor diodes. The module consists of a current–voltage (I–V) amplifier, a voltage–voltage (V–V) amplifier, and an alternating-current adopter with a smoothing circuit. The photocurrents flowing through a diode are converted into voltages and amplified using the I–V and V–V amplifiers. To measure relative sensitivities, we used three silicon PIN diodes (Si-PIN), a cerium-doped yttrium aluminum perovskite [YAP(Ce)] crystal, and a Lu2(SiO4)O [LSO] crystal. Three detectors are as follows: an Si-PIN, a YAP(Ce)–Si-PIN, and an LSO–Si-PIN. Using the three detectors, the amplifier output voltages were in proportion to the tube current at a constant tube voltage of 70kV. Using a multichannel analyzer, the event-pulse-height spectra were measured to analyze X-ray-electric conversion effect in the three detectors. The output voltage of the Si-PIN was approximately twice as high as those obtained using the YAP(Ce)–Si-PIN and the LSO–Si-PIN at the measurement conditions. •X-ray detecting module was developed to measure relative sensitivities of detectors.•Event-pulse-height spectra were measured to analyze X-ray-electric conversion effect.•Total photon number substantially decreased using scintillation detectors.•Scintillation effects using YAP(Ce) and LSO were quite low.•Si-PIN sensitivity without scintillators was quite high.
  • Editor: Elsevier B.V
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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