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2 double prime -4 double prime diameter GaN-on-sapphire substrates free of wafer bow at all temperatures

Preble, Edward A ; Leach, Jacob H ; Metzger, Robert ; Shishkin, Eugene ; Udwary, Kevin A

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.604-607 [Periódico revisado por pares]

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Título:
2 double prime -4 double prime diameter GaN-on-sapphire substrates free of wafer bow at all temperatures
Autor: Preble, Edward A ; Leach, Jacob H ; Metzger, Robert ; Shishkin, Eugene ; Udwary, Kevin A
Assuntos: Crystal growth ; Epitaxy ; Gallium nitrides ; Sapphire ; Solid state physics ; Strategy ; Surface roughness ; Wafers
É parte de: Physica status solidi. C, 2014-02, Vol.11 (3-4), p.604-607
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-2
Descrição: A heteroepitaxial GaN-on-sapphire template growth strategy is presented that eliminates wafer bow in the final structure at both room temperature and at high crystal growth temperatures. The technology is demonstrated here on 2 double prime and 4 double prime substrate sizes with GaN epitaxy thicknesses up to 150 mu m with a sub-nm, epi-ready, final surface roughness. Wafer bow vs. temperature measurements for (a) 15 mu m of GaN on 4 double prime 650 mu m thick sapphire showing 280 mu m bow shift, (b) 10 mu m GaN film on 2 double prime 430 mu m thick sapphire showing 120 mu m bow shift, and (c) and (d), 15 mu m of FLAAT GaN on 2 double prime and 4 double prime sapphire, respectively, each showing less than 30 mu m of bow shift. ( copyright 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Idioma: Inglês

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