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Direct Observation of Charge-Carrier Heating at WZ–ZB InP Nanowire Heterojunctions

Yong, Chaw Keong ; Wong-Leung, Jennifer ; Joyce, Hannah J ; Lloyd-Hughes, James ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, Chennupati ; Johnston, Michael B ; Herz, Laura M

Nano letters, 2013-09, Vol.13 (9), p.4280-4287 [Periódico revisado por pares]

Washington, DC: American Chemical Society

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Título:
Direct Observation of Charge-Carrier Heating at WZ–ZB InP Nanowire Heterojunctions
Autor: Yong, Chaw Keong ; Wong-Leung, Jennifer ; Joyce, Hannah J ; Lloyd-Hughes, James ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, Chennupati ; Johnston, Michael B ; Herz, Laura M
Assuntos: Charge carriers ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Density ; Exact sciences and technology ; Inclusions ; Indium phosphides ; Lattice dynamics ; Materials science ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Nanowires ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Phonons ; Phonons in low-dimensional structures and small particles ; Physics ; Quantum wires ; Semiconductors ; Wurtzite
É parte de: Nano letters, 2013-09, Vol.13 (9), p.4280-4287
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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Descrição: We have investigated the dynamics of hot charge carriers in InP nanowire ensembles containing a range of densities of zinc-blende inclusions along the otherwise wurtzite nanowires. From time-dependent photoluminescence spectra, we extract the temperature of the charge carriers as a function of time after nonresonant excitation. We find that charge-carrier temperature initially decreases rapidly with time in accordance with efficient heat transfer to lattice vibrations. However, cooling rates are subsequently slowed and are significantly lower for nanowires containing a higher density of stacking faults. We conclude that the transfer of charges across the type II interface is followed by release of additional energy to the lattice, which raises the phonon bath temperature above equilibrium and impedes the carrier cooling occurring through interaction with such phonons. These results demonstrate that type II heterointerfaces in semiconductor nanowires can sustain a hot charge-carrier distribution over an extended time period. In photovoltaic applications, such heterointerfaces may hence both reduce recombination rates and limit energy losses by allowing hot-carrier harvesting.
Editor: Washington, DC: American Chemical Society
Idioma: Inglês

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Direct Observation of Charge-Carrier Heating at WZ–ZB InP Nanowire Heterojunctions

Yong, Chaw Keong ; Wong-Leung, Jennifer ; Joyce, Hannah J ; Lloyd-Hughes, James ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, Chennupati ; Johnston, Michael B ; Herz, Laura M

Washington, DC: American Chemical Society

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