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Van der Waals heterostructure of phosphorene and graphene: tuning the Schottky barrier and doping by electrostatic gating

Padilha, J E ; Fazzio, A ; da Silva, Antônio J R

Physical review letters, 2015-02, Vol.114 (6), p.066803-066803, Article 066803 [Periódico revisado por pares]

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Título:
Van der Waals heterostructure of phosphorene and graphene: tuning the Schottky barrier and doping by electrostatic gating
Autor: Padilha, J E ; Fazzio, A ; da Silva, Antônio J R
Assuntos: Band structure of solids ; Barriers ; Devices ; Doping ; Gating and risering ; Graphene ; Heterostructures ; Tuning
É parte de: Physical review letters, 2015-02, Vol.114 (6), p.066803-066803, Article 066803
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: In this Letter, we study the structural and electronic properties of single-layer and bilayer phosphorene with graphene. We show that both the properties of graphene and phosphorene are preserved in the composed heterostructure. We also show that via the application of a perpendicular electric field, it is possible to tune the position of the band structure of phosphorene with respect to that of graphene. This leads to control of the Schottky barrier height and doping of phosphorene, which are important features in the design of new devices based on van der Waals heterostructures.
Editor: United States
Idioma: Inglês

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