2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy

Li, Liang ; Wang, Weike ; Gong, Penglai ; Zhu, Xiangde ; Deng, Bei ; Shi, Xingqiang ; Gao, Guoying ; Li, Huiqiao ; Zhai, Tianyou

Advanced materials (Weinheim), 2018-04, Vol.30 (14), p.e1706771-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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