Idioma:

Carrier concentration under high magnetic fields

Cristoloveanu, S ; Chovet, A ; Lakeou, S

Journal of physics. C, Solid state physics, 1983-02, Vol.16 (5), p.927-938

Texto completo disponível

Citações Citado por

Título:
Carrier concentration under high magnetic fields
Autor: Cristoloveanu, S ; Chovet, A ; Lakeou, S
É parte de: Journal of physics. C, Solid state physics, 1983-02, Vol.16 (5), p.927-938
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: Carrier concentration under crossed electric and magnetic fields is analysed for the first time in the case where the magnitudes of both fields can be large. Carrier distribution, surface concentration and average concentration are studied for intrinsic semiconductors; similar or contrasting behaviour of the effect with increasing magnetic or electric fields are underlined. Influences on the Hall voltage and magnetoresistance measurements are then considered; it is shown that, quite generally, the influence of a (high) magnetic field on the transverse diffusion currents cancels the usual magnetoresistance effect. It follows that the apparent conductivity is only related to the mean carrier concentration. Simple analytical expressions are derived that allow the authors to propose simplified methods for the determination of bulk and surface recombination parameters, and to obtain the optimum parameters (field intensities, sample thickness...) for sensor applications. Experimental data for Ge and InSb with fields in the ranges 0-12 T and 0-10 4 V m -1 agree well with theoretical results.
Editor: IOP Publishing
Idioma: Inglês

Voltar para lista de resultados

Anterior Resultado 3 Avançar Ir para próxima página