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Study of interface states in the metal-semiconductor junction using deep level transient spectroscopy

HAN ZHANG ; AOYAGI, Y ; IWAI, S ; NAMBA, S

Applied physics letters, 1987-02, Vol.50 (6), p.341-343 [Periódico revisado por pares]

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Título:
Study of interface states in the metal-semiconductor junction using deep level transient spectroscopy
Autor: HAN ZHANG ; AOYAGI, Y ; IWAI, S ; NAMBA, S
Assuntos: Applied sciences ; Electronics ; Exact sciences and technology ; Interfaces ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
É parte de: Applied physics letters, 1987-02, Vol.50 (6), p.341-343
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: A new technique is reported for determining the interface states in the metal-semiconductor junction by deep level transient spectroscopy. The continuous interface state distribution in the Al-GaAs junction has been studied for the energy range from 0.19 to 0.57 eV below conduction band by the technique and it is found to be of the order of 4.3×1010–7.9×1010 eV−1 cm−2. The results have shown that the technique is very effective and credible.
Editor: Melville, NY: American Institute of Physics
Idioma: Inglês

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