0.1 /spl mu/m delta-doped MOSFET using post low-energy implanting selective epitaxy
Noda, K. ; Uchida, T. ; Tatsumi, T. ; Aoyama, T. ; Nakajima, K. ; Miyamoto, H. ; Hashimoto, T. ; Sasaki, I.
Proceedings of 1994 VLSI Technology Symposium, 1994, p.19-20
IEEE
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