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INFLUENCE OF TEMPERATURE ON THE DEPOSITION RATE OF POLYCRYSTALLINE SILICON OBTAINED BY VERTICAL LPCVD

Teixeira, R C ; Doi, I ; Diniz, J A ; Zakia, M B P ; Swart, J W

Revista Brasileira de Aplicacoes de Vacuo (Brazilian Journal of Vacuum Applications), 2004-01, Vol.23 (2), p.49-51

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Título:
INFLUENCE OF TEMPERATURE ON THE DEPOSITION RATE OF POLYCRYSTALLINE SILICON OBTAINED BY VERTICAL LPCVD
Autor: Teixeira, R C ; Doi, I ; Diniz, J A ; Zakia, M B P ; Swart, J W
É parte de: Revista Brasileira de Aplicacoes de Vacuo (Brazilian Journal of Vacuum Applications), 2004-01, Vol.23 (2), p.49-51
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
Descrição: Since the first use of Polycrystalline Silicon (poly-Si) in the semiconductor industry in the middle 70's, it became a material of major importance for micro fabricated devices. In the recent area of Micro-Electro-Mechanical Systems (MEMS), the poly-Si has also been shown to be of great importance and usefulness. The use of MEMS devices normally requires thick layers to be concluded (5I Ian), so that, high deposition rates are necessary. In this paper we study the influence of Temperature in the deposition rate of a LPCVD Vertical Reactor installed in the Center for Semiconductors Components (CCS) of the University of Campinas (UNICAMP). The activation energy and temperature influence on the deposition rate are analysed using an Arrhenius equation.
Idioma: Português

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