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The interface between silicon and a high- k oxide

Blöchl, Peter E ; Först, Clemens J ; Ashman, Christopher R ; Schwarz, Karlheinz

Nature, 2004-01, Vol.427 (6969), p.53-56 [Periódico revisado por pares]

London: Nature Publishing

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Título:
The interface between silicon and a high- k oxide
Autor: Blöchl, Peter E ; Först, Clemens J ; Ashman, Christopher R ; Schwarz, Karlheinz
Assuntos: Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Interface structure and roughness ; Multilayers ; Oxygen ; Physics ; Silicon ; Solid surfaces and solid-solid interfaces ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin films and multilayers
É parte de: Nature, 2004-01, Vol.427 (6969), p.53-56
Notas: ObjectType-Article-2
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Descrição: The ability of the semiconductor industry to continue scaling microelectronic devices to ever smaller dimensions (a trend known as Moore's Law) is limited by quantum mechanical effects: as the thickness of conventional silicon dioxide (SiO2) gate insulators is reduced to just a few atomic layers, electrons can tunnel directly through the films. Continued device scaling will therefore probably require the replacement of the insulator with high-dielectric-constant (high-k) oxides, to increase its thickness, thus preventing tunnelling currents while retaining the electronic properties of an ultrathin SiO2 film. Ultimately, such insulators will require an atomically defined interface with silicon without an interfacial SiO2 layer for optimal performance. Following the first reports of epitaxial growth of AO and ABO3 compounds on silicon, the formation of an atomically abrupt crystalline interface between strontium titanate and silicon was demonstrated. However, the atomic structure proposed for this interface is questionable because it requires silicon atoms that have coordinations rarely found elsewhere in nature. Here we describe first-principles calculations of the formation of the interface between silicon and strontium titanate and its atomic structure. Our study shows that atomic control of the interfacial structure by altering the chemical environment can dramatically improve the electronic properties of the interface to meet technological requirements. The interface structure and its chemistry may provide guidance for the selection process of other high-k gate oxides and for controlling their growth.
Editor: London: Nature Publishing
Idioma: Inglês

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The interface between silicon and a high- k oxide

Blöchl, Peter E ; Först, Clemens J ; Ashman, Christopher R ; Schwarz, Karlheinz

London: Nature Publishing

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