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New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles

Bouravleuv, A ; Ilkiv, I ; Reznik, R ; Kotlyar, K ; Soshnikov, I ; Cirlin, G ; Brunkov, P ; Kirilenko, D ; Bondarenko, L ; Nepomnyaschiy, A ; Gruznev, D ; Zotov, A ; Saranin, A ; Dhaka, V ; Lipsanen, H

Nanotechnology, 2018-01, Vol.29 (4), p.045602-045602 [Periódico revisado por pares]

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Título:
New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles
Autor: Bouravleuv, A ; Ilkiv, I ; Reznik, R ; Kotlyar, K ; Soshnikov, I ; Cirlin, G ; Brunkov, P ; Kirilenko, D ; Bondarenko, L ; Nepomnyaschiy, A ; Gruznev, D ; Zotov, A ; Saranin, A ; Dhaka, V ; Lipsanen, H
Assuntos: Ar plasma treatment ; Au nanoparticles ; GaAs nanowires ; molecular beam epitaxy
É parte de: Nanotechnology, 2018-01, Vol.29 (4), p.045602-045602
Notas: NANO-115254.R1
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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Descrição: We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, which allowed us to carry out the detailed study of GaAs nanowire synthesis on Si(111) substrates using colloidal Au nanoparticles as seeds for their growth. The results obtained elucidated the causes of the difference between the initial nanoparticle sizes and the diameters of the grown nanowires.
Editor: England: IOP Publishing
Idioma: Inglês

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