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Magnetic InxGa1 - xN nanowires at room temperature using Cu dopant and annealing

Park, Youn Ho ; Ha, Ryong ; Park, Tea-Eon ; Kim, Sung Wook ; Seo, Dongjea ; Choi, Heon-Jin

Nanoscale research letters, 2015-01, Vol.10 (1), p.3-3 [Periódico revisado por pares]

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Título:
Magnetic InxGa1 - xN nanowires at room temperature using Cu dopant and annealing
Autor: Park, Youn Ho ; Ha, Ryong ; Park, Tea-Eon ; Kim, Sung Wook ; Seo, Dongjea ; Choi, Heon-Jin
Assuntos: Chemistry and Materials Science ; Materials Science ; Molecular Medicine ; Nano ; Nano Commentary ; Nanochemistry ; Nanoscale Science and Technology ; Nanotechnology ; Nanotechnology and Microengineering
É parte de: Nanoscale research letters, 2015-01, Vol.10 (1), p.3-3
Descrição: Single-crystal, Cu-doped In x Ga 1 - x N nanowires were grown on GaN/Al 2 O 3 substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:In x Ga 1 - x N nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanowires exhibited diamagnetism. After annealing, the nanowires exhibited ferromagnetism with saturation magnetic moments higher than 0.8 μ B (1 μ B × 10 -24 Am 2 ) per Cu atom at room temperature by the measurements using a superconducting quantum interference device (SQUID) magnetometer. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L 2,3 -edges indicated that the doped Cu had a local magnetic moment and that its electronic configuration was mainly 3 d 9 . It possessed a small trivalent component, and thus, the n-type behavior of electrical property is measured at room temperature.
Editor: New York: Springer New York
Idioma: Inglês

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