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Large enhancement of thermoelectric performance in MoS₂/h-BN heterostructure due to vacancy-induced band hybridization

Wu, Jing ; Liu, Yanpeng ; Liu, Yi ; Cai, Yongqing ; Zhao, Yunshan ; Ng, Hong Kuan ; Taniguchi, Takashi ; Zhang, Gang ; Qiu, Cheng-Wei ; Chi, Dongzhi ; Neto, A. H. Castro ; Thong, John T. L. ; Loh, Kian Ping ; Hippalgaonkar, Kedar

Proceedings of the National Academy of Sciences - PNAS, 2020-06, Vol.117 (25), p.13929-13936 [Periódico revisado por pares]

Washington: National Academy of Sciences

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  • Título:
    Large enhancement of thermoelectric performance in MoS₂/h-BN heterostructure due to vacancy-induced band hybridization
  • Autor: Wu, Jing ; Liu, Yanpeng ; Liu, Yi ; Cai, Yongqing ; Zhao, Yunshan ; Ng, Hong Kuan ; Taniguchi, Takashi ; Zhang, Gang ; Qiu, Cheng-Wei ; Chi, Dongzhi ; Neto, A. H. Castro ; Thong, John T. L. ; Loh, Kian Ping ; Hippalgaonkar, Kedar
  • Assuntos: Boron ; Boron nitride ; Charge transport ; Chemical potential ; Conduction ; Heterostructures ; Hybridization ; Impurities ; Interfaces ; Molybdenum ; Molybdenum disulfide ; Physical Sciences ; Power factor ; Seebeck effect ; Substrates ; Thermoelectricity ; Tuning ; Two dimensional materials ; Vacancies
  • É parte de: Proceedings of the National Academy of Sciences - PNAS, 2020-06, Vol.117 (25), p.13929-13936
  • Notas: ObjectType-Article-1
    SourceType-Scholarly Journals-1
    ObjectType-Feature-2
    content type line 23
    Author contributions: A.H.C.N., J.T.L.T., K.P.L., and K.H. supervised the projects; J.W., Yanpeng Liu, K.P.L., and K.H. conceived the idea and design the experiment; J.W., Yanpeng Liu, Yi Liu, Y.C., Y.Z., H.K.N., K.W., T.T., G.Z., and K.H. performed research; K.W. and T.T. contributed high-quality hBN substrates; J.W., Yanpeng Liu, Yi Liu, Y.C., Y.Z., H.K.N., C.-W.Q., D.C., A.H.C.N., J.T.L.T., K.P.L., and K.H. analyzed data; and J.W., Yanpeng Liu, Y.C., K.P.L., and K.H. wrote the paper.
    1J.W. and Yanpeng Liu contributed equally to this work.
    Edited by Eva Y. Andrei, Rutgers, The State University of New Jersey, Piscataway, NJ, and approved May 11, 2020 (received for review April 22, 2020)
  • Descrição: Local impurity states arising from atomic vacancies in two-dimensional (2D) nanosheets are predicted to have a profound effect on charge transport due to resonant scattering and can be used to manipulate thermoelectric properties. However, the effects of these impurities are often masked by external fluctuations and turbostratic interfaces; therefore, it is challenging to probe the correlation between vacancy impurities and thermoelectric parameters experimentally. In this work, we demonstrate that n-type molybdenum disulfide (MoS₂) supported on hexagonal boron nitride (h-BN) substrate reveals a large anomalous positive Seebeck coefficient with strong band hybridization. The presence of vacancies on MoS₂ with a large conduction subband splitting of 50.0 ± 5.0 meV may contribute to Kondo insulator-like properties. Furthermore, by tuning the chemical potential, the thermoelectric power factor can be enhanced by up to two orders of magnitude to 50 mW m−1 K−2. Our work shows that defect engineering in 2D materials provides an effective strategy for controlling band structure and tuning thermoelectric transport.
  • Editor: Washington: National Academy of Sciences
  • Idioma: Inglês
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