Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

Shaneyfelt, M.R. ; Schwank, J.R. ; Fleetwood, D.M. ; Winokur, P.S. ; Hughes, K.L. ; Sexton, F.W.

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), 1990-12, Vol.37 (6), p.1632-1640 [Periódico revisado por pares]

United States: IEEE

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