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Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping

Lv, Zun-Ren ; Zhang, Zhong-Kai ; Yang, Xiao-Guang ; Yang, Tao

Applied physics letters, 2018-07, Vol.113 (1) [Periódico revisado por pares]

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Título:
Improved performance of 1.3-μm InAs/GaAs quantum dot lasers by direct Si doping
Autor: Lv, Zun-Ren ; Zhang, Zhong-Kai ; Yang, Xiao-Guang ; Yang, Tao
Assuntos: Applied physics ; Continuous radiation ; Doping ; Epitaxial growth ; Laser beams ; Lasers ; Molecular beam epitaxy ; Molecular beams ; Performance enhancement ; Quantum dot lasers ; Quantum dots ; Silicon ; Threshold currents
É parte de: Applied physics letters, 2018-07, Vol.113 (1)
Descrição: We demonstrate significantly enhanced performances of 1.3-μm InAs/GaAs quantum dot (QD) lasers by directly Si-doped QDs. The lasers were grown by molecular beam epitaxy. Following Si doping, the ridge waveguide laser, with uncoated facets, showed a remarkably reduced continuous-wave threshold current density of 71.6 A/cm2 (14.3 A/cm2 per QD layer), compared with 167.3 A/cm2 (33.5 A/cm2 per QD layer) for an undoped device with an identical structure, measured at 20 °C. Moreover, doping improved the single-side slope efficiency from 0.28 to 0.42 W/A. In addition, the Si-doped QD laser exhibited a higher lasing temperature of up to 140 °C compared with 120 °C for the undoped QD laser.
Editor: Melville: American Institute of Physics
Idioma: Inglês

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