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Electronic Structure of Metal-Semiconductor Contacts

Mönch, Winfried

Dordrecht: Springer Netherlands 1990

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  • Título:
    Electronic Structure of Metal-Semiconductor Contacts
  • Autor: Mönch, Winfried
  • Assuntos: Chemistry, Physical organic ; Computer engineering ; Condensed Matter Physics ; Electrical Engineering ; Physical Chemistry ; Physics ; Physics, general ; Semiconductors ; Surfaces (Physics) ; Surfaces and Interfaces, Thin Films
  • Descrição: Interface and surface science have been important in the development of semicon­ ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor­ insulator interfaces, heterojunctions between distinct semiconductors, and metal­ semiconductor contacts. The latter ones stood almost at the very beginning of semi­ conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-.
  • Títulos relacionados: Perspectives in Condensed Matter Physics, A Critical Reprint Series
  • Editor: Dordrecht: Springer Netherlands
  • Data de criação/publicação: 1990
  • Formato: 302
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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