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Formation of basal plane fiber-textured Ti2AlN films on amorphous substrates

Beckers, M. ; Eriksson, F. ; Lauridsen, J. ; Baehtz, C. ; Jensen, J. ; Hultman, L.

Physica status solidi. PSS-RRL. Rapid research letters, 2010-06, Vol.4 (5-6), p.121-123 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag

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Título:
Formation of basal plane fiber-textured Ti2AlN films on amorphous substrates
Autor: Beckers, M. ; Eriksson, F. ; Lauridsen, J. ; Baehtz, C. ; Jensen, J. ; Hultman, L.
Assuntos: Aluminum ; Aluminum nitride ; Annealing ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Deposition ; Deposition by sputtering ; Diffusion ; Exact sciences and technology ; growth ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Orientation ; Physics ; sputtering ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; TECHNOLOGY ; TEKNIKVETENSKAP ; Thin film structure and morphology ; thin films ; Titanium ; Transformations ; X-ray diffraction
É parte de: Physica status solidi. PSS-RRL. Rapid research letters, 2010-06, Vol.4 (5-6), p.121-123
Notas: Swedish Research Council (VR)
ArticleID:PSSR201004100
Strategic Research Centre on Materials Science for Nanoscale Surface Engineering (MS2E)
ark:/67375/WNG-NXJ7F7R8-6
Swedish Foundation for Strategic Research (SSF)
istex:632CC77F2DBA6E88A034179D9ECDCF6BED19D2B3
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: The synthesis of fiber‐textured Ti2AlN(0001) films on SiO2 was characterized by in‐situ and ex‐situ X‐ray scattering and Rutherford backscattering spectrometry. Ti2AlN was formed by solid‐state reaction between sequentially deposited Ti and AlN layers. A deposition at 275 °C yields a Ti(0001) out‐of‐plane orientation which is maintained for the following AlN(0001)/Ti(0001) layers. Annealing to 600 °C yields AlN decomposition and diffusion of Al and N into Ti, with consecutive transformation into Ti3AlN(111) and Ti2AlN(0001) plus AlN residuals. Despite preferred Ti2AlN(0001) out‐of‐plane orientation, the in‐plane distribution is random, as expected from the self‐organized pseudo‐epitaxial growth. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) Basal‐plane oriented Ti2AlN(0001) films are a possible substitute for low‐friction coatings, but up to now were only obtained by deposition onto single‐crystal substrates at high temperatures. This letter demonstrates that fiber‐textured Ti2AlN(0001) can be obtained also on an amorphous SiO2 substrate at a low temperature of 600°C by growth of a Ti(0001) nucleation layer, followed by topotaxial reaction between subsequently deposited Ti(0001)/AlN(0001) templates.
Editor: Berlin: WILEY-VCH Verlag
Idioma: Inglês

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Formation of basal plane fiber-textured Ti2AlN films on amorphous substrates

Beckers, M. ; Eriksson, F. ; Lauridsen, J. ; Baehtz, C. ; Jensen, J. ; Hultman, L.

Berlin: WILEY-VCH Verlag

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