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A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; IEEE International Conference on Devices, Circuits and Syems (3. 2000 Cancun)

Proceedings Piscataway : IEEE, 2000

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Title:
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K
Author: Aparecido Sirley Nicolett
João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; IEEE International Conference on Devices, Circuits and Syems (3. 2000 Cancun)
Subjects: CIRCUITOS INTEGRADOS
Is Part Of: Proceedings Piscataway : IEEE, 2000
Local notes: Disponível em CD-ROM
Publisher: Piscataway IEEE
Creation Date: 2000
Format: p. D45-1-D45-5.
Language: English

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