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Improved analytical model for ZTC bias point for strained Tri-gates FinFETs

Luciano Mendes Almeida João Antonio Martino 1959-; Eddy Simoen; Cor Claeys

Microelectronics Technology and Devices - SBMicro 2010 v.31, n.1, p. 385-392, 2010

New Jersey 2010

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  • Title:
    Improved analytical model for ZTC bias point for strained Tri-gates FinFETs
  • Author: Luciano Mendes Almeida
  • João Antonio Martino 1959-; Eddy Simoen; Cor Claeys
  • Subjects: ELETROQUÍMICA
  • Is Part Of: Microelectronics Technology and Devices - SBMicro 2010 v.31, n.1, p. 385-392, 2010
  • Notes: Disponível em: https://doi.org/10.1149/1.3474183. Acesso em: 15 ago 2023
  • Publisher: New Jersey
  • Creation Date: 2010
  • Format: p. 385-392.
  • Language: English
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