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0-1 GHz waveguide 10.6 mu m GaAs electrooptic modulator

Brown, R.T.

IEEE journal of quantum electronics, 1992-05, Vol.28 (5), p.1349-1352 [Periódico revisado por pares]

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Título:
0-1 GHz waveguide 10.6 mu m GaAs electrooptic modulator
Autor: Brown, R.T.
Assuntos: Applied sciences ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronics ; Electrooptic modulators ; Electrooptical waveguides ; Exact sciences and technology ; Frequency ; Gallium arsenide ; Integrated optics. Optical fibers and wave guides ; Laser applications ; Laser theory ; Lasers and electrooptics ; Optical and optoelectronic circuits ; Optical losses ; Optical waveguide theory ; Optical waveguides
É parte de: IEEE journal of quantum electronics, 1992-05, Vol.28 (5), p.1349-1352
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: A GaAs electrooptic modulator for use in 10.6- mu m laser frequency shifting applications is described. High-beam-quality output signals with a frequency tunability of 0.1-1.0 GHz were demonstrated. Thick epitaxial GaAs-AlGaAs waveguide structures were successfully fabricated into single-mode channel waveguides with excellent optical and electrooptic properties. A lumped-element modulator, with electrical and electrooptic characteristics in good agreement with theory, was operated at RF drive power levels up to the reverse breakdown voltage limit. The insertion loss of the modulator was quite high, due to absorption losses in the epitaxial material.< >
Editor: New York, NY: IEEE
Idioma: Inglês

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