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1
Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperatures
Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperatures
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Theoretical and experimental study of the front and back interface trap density in accumulation mode SOI MOSFETs at low temperatures

João Antonio Martino 1959- Eddy Simoen; Cor Claeys

Claeys, C.L.; Raider, S.I.; Brown, W.D.; Kirschman, R.K. Low Temperature Electronics and High Temperature Superconductivity Pennington: The Electrochemical Society, 1995

Pennington The Electrochemical Society 1995

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2
Radiation Effects in Advanced Semiconductor Materials and Devices
Radiation Effects in Advanced Semiconductor Materials and Devices
Radiation Effects in Advanced Semiconductor Materials and Devices
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Radiation Effects in Advanced Semiconductor Materials and Devices

Claeys E Simoen; Eddy Simoen

Springer Berlin Heidelberg 2002

Online access. The library also has physical copies.

3
Combined 'delta' L and series resistance extraction of LDD MOSFETs at 77K
Combined 'delta' L and series resistance extraction of LDD MOSFETs at 77K
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Combined 'delta' L and series resistance extraction of LDD MOSFETs at 77K

R Schreutelkamp João Antonio Martino 1959-; Eddy Simoen; L Deferm; Cor Claeys

Claeys, C.L.; Raider, S.I.; Brown, W.D.; Kirschman, R.K. Low Temperature Electronics and High Temperature Superconductivity Pennington: The Electrochemical Society, 1995

Pennington The Electrochemical Society 1995

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4
Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K
Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K
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Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

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5
Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence
Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence
Material Type:
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Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Conference on Microelectronics and Packaging (15. 2000 Manaus)

SBMicro 2000 : proceedings Manaus : SBMicro/UA/UFRGS/UNICAMP/USP, 2000

Manaus SBMicro/UA/UFRGS/UNICAMP/USP 2000

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6
The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs
The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs
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The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs

Luciano Mendes Camillo João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

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7
Theoretical and experimental study of the front and back interface trap density in accumulation mode soi mosfets at low temperature
Theoretical and experimental study of the front and back interface trap density in accumulation mode soi mosfets at low temperature
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Theoretical and experimental study of the front and back interface trap density in accumulation mode soi mosfets at low temperature

João Antonio Martino 1959- Eddy Simoen; Cor Claeys; Symposium on Low Temperature Electronics and High Temperature Superconductivity (3. 1995 Reno); Electrochemical Society Meeting (187. 1995 Reno)

Pennington v.1 , n.525, p.812-3, 1995 Extended Abstracts

Pennington 1995

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8
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
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Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs

Milene Galeti João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington: The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

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9
Soi mesfet modo acumulacao em 77 k impacto dos efeitos transitorios e determinacao da densidade de armadilhas de interface
Soi mesfet modo acumulacao em 77 k impacto dos efeitos transitorios e determinacao da densidade de armadilhas de interface
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Soi mesfet modo acumulacao em 77 k impacto dos efeitos transitorios e determinacao da densidade de armadilhas de interface

João Antonio Martino 1959- Eddy Simoen; Antônio Luís Pacheco Rotondaro; Ulf Magnusson; Cor Claeys; Congresso da Sociedade Brasileira de Microeletronica (8. 1993 Campinas)

Anais Campinas : Sbmicro, 1993

Campinas Sbmicro 1993

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10
Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
Material Type:
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Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Silicon-on-Insulator Technology and Devices (10. 2001 Washington, DC)

Proceedings Pennington : The Electrochemical Society, 2001

Pennington The Electrochemical Society 2001

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