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Journal Of Applied Physics
| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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(001) GaAs substrate preparation for direct ZnSe heteroepitaxyBousquet, V. ; Ongaretto, C. ; Laügt, M. ; Behringer, M. ; Tournié, E. ; Faurie, J.-P.Journal of applied physics, 1997-05, Vol.81 (10), p.7012-7017 [Peer Reviewed Journal]Full text available |
| 2 |
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[001]-oriented nonepitaxial growth in L1-ordered FePt thin film by SiO2 addition and rapid thermal annealingNarisawa, T. ; Hasegawa, T. ; Ishio, S. ; Yamane, H.Journal of applied physics, 2011-02, Vol.109 (3) [Peer Reviewed Journal]Full text available |
| 3 |
Material Type: Article
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{001} Oriented piezoelectric films prepared by chemical solution deposition on Ni foilsYeo, Hong Goo ; Trolier-McKinstry, SusanJournal of applied physics, 2014-07, Vol.116 (1) [Peer Reviewed Journal]Melville: American Institute of PhysicsFull text available |
| 4 |
Material Type: Article
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0.1–10-keV x-ray-induced electron emissions from solids—Models and secondary electron measurementsHenke, Burton L. ; Smith, Jerel A. ; Attwood, David T.Journal of applied physics, 1977-05, Vol.48 (5), p.1852-1866 [Peer Reviewed Journal]Full text available |
| 5 |
Material Type: Article
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0.1-micron-wide sandwich flux guide and free layer for spin dependent tunneling head sensorsPohm, A. V. ; Anderson, J. M.Journal of applied physics, 2002-05, Vol.91 (10), p.8772-8773 [Peer Reviewed Journal]Full text available |
| 6 |
Material Type: Article
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[010] uniaxial-anisotropy induced asymmetry of magnetic reversal in (Ga,Mn)AsLin, D. C. ; Bi, G. Y. ; Li, F. ; Song, C. ; Wang, Y. Y. ; Cui, B. ; Wang, G. Y. ; Pan, F.Journal of applied physics, 2013-01, Vol.113 (4) [Peer Reviewed Journal]Full text available |
| 7 |
Material Type: Article
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0.3-μm-diam bubble material of (BiSmLu)3(FeSc)5O12 grown from PbO-Bi2O3-V2O5 fluxHosoe, Yuzuru ; Andoh, Keikichi ; Ikeda, Tadashi ; Suzuki, RyoJournal of applied physics, 1987-04, Vol.61 (8), p.3485-3487 [Peer Reviewed Journal]Full text available |
| 8 |
Material Type: Article
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0.4-3.0-MeV-range Be-ion implantations into InP:FeNADELLA, R. K ; RAO, M. V ; SIMONS, D. S ; CHI, P. HJournal of applied physics, 1991-09, Vol.70 (6), p.2973-2978 [Peer Reviewed Journal]Woodbury, NY: American Institute of PhysicsFull text available |
| 9 |
Material Type: Article
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0.8 eV excitation of the quenched EL2 ù level in semi-insulating GaAsJIMENEZ, J ; ALVAREZ, A ; GONZALEZ, M. A ; BONNAFE, JJournal of applied physics, 1989, Vol.66 (5), p.2221-2222 [Peer Reviewed Journal]Woodbury, NY: American Institute of PhysicsFull text available |
| 10 |
Material Type: Article
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0.9-W Raman oscillatorAmmann, E. O. ; Decker, C. D.Journal of applied physics, 1977-01, Vol.48 (5), p.1973-1975 [Peer Reviewed Journal]Full text available |
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