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Band Gap Of The Iii-V Semiconductors As A Function Of Lattice Parameter
Band Gap Of The Iii-V Semiconductors As A Function Of Lattice Parameter
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Band Gap Of The Iii-V Semiconductors As A Function Of Lattice Parameter

Caro, Miguel A.

Zenodo 2013

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Strain Controlled Ultra-Low-Energy Magnetic Tunneling Junction
Strain Controlled Ultra-Low-Energy Magnetic Tunneling Junction
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Strain Controlled Ultra-Low-Energy Magnetic Tunneling Junction

Ahmad, Hasnain ; Bandyopadhyay, Supriyo ; Atulasimha, Jayasimha

VCU Scholars Compass 2015

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High-Speed and High-Current Vertical Organic Permeable Base Transistors
High-Speed and High-Current Vertical Organic Permeable Base Transistors
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High-Speed and High-Current Vertical Organic Permeable Base Transistors

Dollinger, Felix ; Iseke, Henning ; Erjuan Guo ; Fischer, Axel ; Formánek, Peter ; Kleemann, Hans ; Leo, Karl

figshare 2019

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SI2: Automated Statistical Mechanics for the First-Principles Prediction of Finite Temperature Properties of Crystals
SI2: Automated Statistical Mechanics for the First-Principles Prediction of Finite Temperature Properties of Crystals
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SI2: Automated Statistical Mechanics for the First-Principles Prediction of Finite Temperature Properties of Crystals

Ven, Anton Van Der

figshare 2020

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Albern Surya Adi

figshare 2021

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Fig. 4. (a) PL spectra of TCP:Ce and TCSP:Ce (0 < x ≤ 3) under 310 nm excitation. (b) IQE under 310 nm excitation. (c) Debye temperature (ΘD) estimated with DFT calculations. (d) Top: high-resolution XPS energy spectra Ce in TCSP:Ce (x = 1.5) and bottom: ratio of Ce3+ in TCP:Ce and TCSP:Ce (0 < x ≤ 3). (e) Schematic diagram of improving performance by forming Solid solution-biphasic system, increasing entropy and enhancing the rigid host-structure
Fig. 4. (a) PL spectra of TCP:Ce and TCSP:Ce (0 < x ≤ 3) under 310 nm excitation. (b) IQE under 310 nm excitation. (c) Debye temperature (ΘD) estimated with DFT calculations. (d) Top: high-resolution XPS energy spectra Ce in TCSP:Ce (x = 1.5) and bottom: ratio of Ce3+ in TCP:Ce and TCSP:Ce (0 < x ≤ 3). (e) Schematic diagram of improving performance by forming Solid solution-biphasic system, increasing entropy and enhancing the rigid host-structure
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Fig. 4. (a) PL spectra of TCP:Ce and TCSP:Ce (0 < x ≤ 3) under 310 nm excitation. (b) IQE under 310 nm excitation. (c) Debye temperature (ΘD) estimated with DFT calculations. (d) Top: high-resolution XPS energy spectra Ce in TCSP:Ce (x = 1.5) and bottom: ratio of Ce3+ in TCP:Ce and TCSP:Ce (0 < x ≤ 3). (e) Schematic diagram of improving performance by forming Solid solution-biphasic system, increasing entropy and enhancing the rigid host-structure

Pan, Xin

figshare 2022

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Fig. 1. Schematic diagram of composition design, property regulation, and potential applications of whitlockite phosphors in this research. The main property regulation methods include (i) constructing a rigid structure and (ii) eliminating vacancy defects, which are proven highly effective for improving luminescence efficiency
Fig. 1. Schematic diagram of composition design, property regulation, and potential applications of whitlockite phosphors in this research. The main property regulation methods include (i) constructing a rigid structure and (ii) eliminating vacancy defects, which are proven highly effective for improving luminescence efficiency
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Fig. 1. Schematic diagram of composition design, property regulation, and potential applications of whitlockite phosphors in this research. The main property regulation methods include (i) constructing a rigid structure and (ii) eliminating vacancy defects, which are proven highly effective for improving luminescence efficiency

Pan, Xin

figshare 2022

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8
Fig. 8. (a) Packaging the developed phosphors to LED lamps. (b) The monitored device spectra at different currents (5&#8211;30 mA) single component TCSP:Ce,Na,Mn (up) and combination of mixed commercial phosphors (down). (c) The CIE coordinates and photographs of two lamps for warm-white LED (left) and plant-growth lighting (right)
Fig. 8. (a) Packaging the developed phosphors to LED lamps. (b) The monitored device spectra at different currents (5&#8211;30 mA) single component TCSP:Ce,Na,Mn (up) and combination of mixed commercial phosphors (down). (c) The CIE coordinates and photographs of two lamps for warm-white LED (left) and plant-growth lighting (right)
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Fig. 8. (a) Packaging the developed phosphors to LED lamps. (b) The monitored device spectra at different currents (5–30 mA) single component TCSP:Ce,Na,Mn (up) and combination of mixed commercial phosphors (down). (c) The CIE coordinates and photographs of two lamps for warm-white LED (left) and plant-growth lighting (right)

Pan, Xin

figshare 2022

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9
Fig. 6. (a) PL spectra of TCP:Ce, TCP:Ce,Li, TCP:Ce,Na and TCP:Ce,K under 310 nm excitation. (b) PL intensity as a function of temperature (from 25 to 225 &#9702;C) in four samples. (c) CL spectra of TCP:Ce,Na under 10&#8211;100 mA and 8 kV. The inset shows the CL intensity of TCP:Ce and TCP:Ce,Na as a function of applied current. (d) CL spectra of TCP:Ce,Na under 60 mA and 5&#8211;15 kV. The inset shows the CL intensity of TCP:Ce and TCP:Ce,Na as a function of accelerating voltage. (e) IQE of TCP: Ce,Li, TCP
Fig. 6. (a) PL spectra of TCP:Ce, TCP:Ce,Li, TCP:Ce,Na and TCP:Ce,K under 310 nm excitation. (b) PL intensity as a function of temperature (from 25 to 225 &#9702;C) in four samples. (c) CL spectra of TCP:Ce,Na under 10&#8211;100 mA and 8 kV. The inset shows the CL intensity of TCP:Ce and TCP:Ce,Na as a function of applied current. (d) CL spectra of TCP:Ce,Na under 60 mA and 5&#8211;15 kV. The inset shows the CL intensity of TCP:Ce and TCP:Ce,Na as a function of accelerating voltage. (e) IQE of TCP: Ce,Li, TCP
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Fig. 6. (a) PL spectra of TCP:Ce, TCP:Ce,Li, TCP:Ce,Na and TCP:Ce,K under 310 nm excitation. (b) PL intensity as a function of temperature (from 25 to 225 ◦C) in four samples. (c) CL spectra of TCP:Ce,Na under 10–100 mA and 8 kV. The inset shows the CL intensity of TCP:Ce and TCP:Ce,Na as a function of applied current. (d) CL spectra of TCP:Ce,Na under 60 mA and 5–15 kV. The inset shows the CL intensity of TCP:Ce and TCP:Ce,Na as a function of accelerating voltage. (e) IQE of TCP: Ce,Li, TCP

Pan, Xin

figshare 2022

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Fig. 7. (a) XPS spectra monitoring the valence states of Li, Na, and K. (b) The formation energies &#916; E of five different cationic lattice sites and interstitial vacancies occupied by Li in the crystal were calculated by DFT theory. (c) Positron annihilation lifetime spectra to determine the defect concentrations. (d) XPS energy spectra. (e) The ratio of Ce3+ ions to the total Ce ions in TCP:Ce, CLP:Ce, CNP:Ce, and CKP:Ce according to the XPS results. (f) The schematic diagram for the improveme
Fig. 7. (a) XPS spectra monitoring the valence states of Li, Na, and K. (b) The formation energies &#916; E of five different cationic lattice sites and interstitial vacancies occupied by Li in the crystal were calculated by DFT theory. (c) Positron annihilation lifetime spectra to determine the defect concentrations. (d) XPS energy spectra. (e) The ratio of Ce3+ ions to the total Ce ions in TCP:Ce, CLP:Ce, CNP:Ce, and CKP:Ce according to the XPS results. (f) The schematic diagram for the improveme
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Fig. 7. (a) XPS spectra monitoring the valence states of Li, Na, and K. (b) The formation energies Δ E of five different cationic lattice sites and interstitial vacancies occupied by Li in the crystal were calculated by DFT theory. (c) Positron annihilation lifetime spectra to determine the defect concentrations. (d) XPS energy spectra. (e) The ratio of Ce3+ ions to the total Ce ions in TCP:Ce, CLP:Ce, CNP:Ce, and CKP:Ce according to the XPS results. (f) The schematic diagram for the improveme

Pan, Xin

figshare 2022

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