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0.1-㎛ InGa0.53As/InAl0.52As HEMT Using a New Sidewall Process
0.1-㎛ InGa0.53As/InAl0.52As HEMT Using a New Sidewall Process
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0.1-㎛ InGa0.53As/InAl0.52As HEMT Using a New Sidewall Process

Sung-WonKim ; Hong-JuPark ; Sun-YoungOh ; Dae-YoungKo ; Dae-HyunKim ; Kwang-SeokSeo

Journal of the Korean Physical Society, 2002, 41(6), , pp.918-921 [Revista revisada por pares]

한국물리학회

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2
0.2% N을 첨가한 수퍼 2상 스테인리스강의 열처리 조건에 따른 특성 평가 : 제3보: 부식특성
0.2% N을 첨가한 수퍼 2상 스테인리스강의 열처리 조건에 따른 특성 평가 : 제3보: 부식특성
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0.2% N을 첨가한 수퍼 2상 스테인리스강의 열처리 조건에 따른 특성 평가 : 제3보: 부식특성

안석환(Seok-Hwan Ahn) ; 강흥주(Heung-Joo Kang) ; 서현수(Hyun-Soo Seo) ; 남기우(Ki-Woo Nam) ; 이건찬(Kun-Chan Lee)

한국해양공학회지, 2009, 23(5), 90, pp.85-91 [Revista revisada por pares]

한국해양공학회

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3
2-Dimensional Holographic Grating Formation in Chalcogenide Thin Films
2-Dimensional Holographic Grating Formation in Chalcogenide Thin Films
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2-Dimensional Holographic Grating Formation in Chalcogenide Thin Films

Lee, Jung-Tae ; Yeo, Choel-Ho ; Chung, Hong-Bay

Transactions on Electrical and Electronic Materials, 2004, 5(1), , pp.34-37 [Revista revisada por pares]

한국전기전자재료학회

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4
2 Dimensional Voltage Distribution Measurement of YBCO Thin Film during S/N transition
2 Dimensional Voltage Distribution Measurement of YBCO Thin Film during S/N transition
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2 Dimensional Voltage Distribution Measurement of YBCO Thin Film during S/N transition

Mori, Masato ; Nishioka, Hideyoshi ; Baba, Jumpei ; Nitta, Tanzo ; Kumagai, Toshiya ; Shibuya, Masatoyo

Journal of International Council of Electrical Engineering, 2011, Vol.1 (2), p.229-233 [Revista revisada por pares]

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5
200 MeV Ag 15+ ion beam irradiation induced modifications in spray deposited MoO 3 thin films by fluence variation
200 MeV Ag 15+ ion beam irradiation induced modifications in spray deposited MoO 3 thin films by fluence variation
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200 MeV Ag 15+ ion beam irradiation induced modifications in spray deposited MoO 3 thin films by fluence variation

Rathika, R ; Kovendhan, M ; Joseph, D. Paul ; Vijayarangamuthu, K ; Kumar, A. Sendil ; Venkateswaran, C ; Asokan, K ; Jeyakumar, S. Johnson

Nuclear engineering and technology, 2019, Vol.51 (8), p.1983-1990 [Revista revisada por pares]

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6
3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate
3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate
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3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate

Kim, Yong-Hae ; Chung, Choong-Heui ; Moon, Jae-Hyun ; Lee, Su-Jae ; Kim, Gi-Heon ; Song, Yoon-Ho

ETRI journal, 2008-02, Vol.30 (2), p.308-314 [Revista revisada por pares]

한국전자통신연구원

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7
380‐nm Ultraviolet Light‐Emitting Diodes with InGaN/AlGaN MQW Structure
380‐nm Ultraviolet Light‐Emitting Diodes with InGaN/AlGaN MQW Structure
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380‐nm Ultraviolet Light‐Emitting Diodes with InGaN/AlGaN MQW Structure

Bae, Sung‐Bum ; Kim, Sung‐Bok ; Kim, Dong‐Churl ; Nam, Eun Soo ; Lim, Sung‐Mook ; Son, Jeong‐Hwan ; Jo, Yi‐Sang

ETRI Journal, 2013, 35(4), , pp.566-570 [Revista revisada por pares]

Electronics and Telecommunications Research Institute (ETRI)

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8
63Ni 밀봉선원용 Ni 전기도금 박막에서 Ni 농도가 잔류응력에 미치는 영향
63Ni 밀봉선원용 Ni 전기도금 박막에서 Ni 농도가 잔류응력에 미치는 영향
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63Ni 밀봉선원용 Ni 전기도금 박막에서 Ni 농도가 잔류응력에 미치는 영향

윤필근(Pilgeun Yoon) ; 박덕용(Deok-Yong Park)

Biuletyn Uniejowski, 2017-02, Vol.50 (1), p.29-34 [Revista revisada por pares]

한국표면공학회

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9
A 32 nm NPN SOI HBT with Programmable Power Gain and 839 GHzV f t BV CEO Product
A 32 nm NPN SOI HBT with Programmable Power Gain and 839 GHzV f t BV CEO Product
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A 32 nm NPN SOI HBT with Programmable Power Gain and 839 GHzV f t BV CEO Product

Misra, Prasanna Kumar ; Qureshi, S

Journal of semiconductor technology and science, 2014, Vol.14 (6), p.712-717

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10
a-axis Contribution to the Polarization Value in (117)/(200)-Oriented Bi3.75La0.25Ti3O12 Thin Films Deposited on Pt(111)/Ti/SiO2/Si Substrate
a-axis Contribution to the Polarization Value in (117)/(200)-Oriented Bi3.75La0.25Ti3O12 Thin Films Deposited on Pt(111)/Ti/SiO2/Si Substrate
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a-axis Contribution to the Polarization Value in (117)/(200)-Oriented Bi3.75La0.25Ti3O12 Thin Films Deposited on Pt(111)/Ti/SiO2/Si Substrate

Sungmin Park ; Jaemoon Pak ; Doyoung Park ; Hyeonsik Cheong ; Gwangseo Park

Journal of the Korean Physical Society, 2009-02, p.926-929 [Revista revisada por pares]

한국물리학회

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