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1
Spin state driven weighted mobility and thermal conductivity properties of electron (Hf) doped strongly correlated Mott insulator LaCoO3 for thermoelectric applications
Spin state driven weighted mobility and thermal conductivity properties of electron (Hf) doped strongly correlated Mott insulator LaCoO3 for thermoelectric applications
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Spin state driven weighted mobility and thermal conductivity properties of electron (Hf) doped strongly correlated Mott insulator LaCoO3 for thermoelectric applications

K. P., Mohamed Jibri ; John, Simon Sajan ; J., Archana ; S., Harish ; M., Navaneethan

Applied physics letters, 2024-07, Vol.125 (3) [Revista revisada por pares]

Melville: American Institute of Physics

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2
Micropillar compression of single-crystal single-phase (Co, Cu, Mg, Ni, Zn)O
Micropillar compression of single-crystal single-phase (Co, Cu, Mg, Ni, Zn)O
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Micropillar compression of single-crystal single-phase (Co, Cu, Mg, Ni, Zn)O

Norman, Jacob E. ; Wang, Xin ; Dupuy, Alexander D. ; Schoenung, Julie M.

Applied physics letters, 2024-07, Vol.125 (3) [Revista revisada por pares]

Melville: American Institute of Physics

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3
Manipulating the metal–insulator transitions and thermoelectric bi-functionality for correlated vanadium dioxide pellets
Manipulating the metal–insulator transitions and thermoelectric bi-functionality for correlated vanadium dioxide pellets
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Manipulating the metal–insulator transitions and thermoelectric bi-functionality for correlated vanadium dioxide pellets

Zhou, Xuanchi ; Jiao, Yongjie ; Li, Haifan

Applied physics letters, 2024-07, Vol.125 (3) [Revista revisada por pares]

Melville: American Institute of Physics

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4
Wafer-scale bonded GaN–AlN with high interface thermal conductance
Wafer-scale bonded GaN–AlN with high interface thermal conductance
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Wafer-scale bonded GaN–AlN with high interface thermal conductance

Li, Man ; Pan, Kaicheng ; Ge, Yijun ; Huynh, Kenny ; Goorsky, Mark S. ; Fisher, Timothy S. ; Hu, Yongjie

Applied physics letters, 2024-07, Vol.125 (3) [Revista revisada por pares]

Melville: American Institute of Physics

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5
Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
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Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

Liu, Siyu ; Zhuang, Yihao ; Li, Hanchao ; Xie, Qingyun ; Wang, Yue ; Xie, Hanlin ; Ranjan, Kumud ; Ng, Geok Ing

Applied physics letters, 2024-07, Vol.125 (2) [Revista revisada por pares]

Melville: American Institute of Physics

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6
Prospects of silicide contacts for silicon quantum electronic devices
Prospects of silicide contacts for silicon quantum electronic devices
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Prospects of silicide contacts for silicon quantum electronic devices

Tsoukalas, K. ; Schupp, F. ; Sommer, L. ; Bouquet, I. ; Mergenthaler, M. ; Paredes, S. ; Vico Triviño, N. ; Luisier, M. ; Salis, G. ; Harvey-Collard, P. ; Zumbühl, D. ; Fuhrer, A.

Applied physics letters, 2024-07, Vol.125 (1) [Revista revisada por pares]

Melville: American Institute of Physics

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7
InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850  °C by MOVPE
InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850  °C by MOVPE
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InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850  °C by MOVPE

Pitaval, Charles ; Aroulanda, Sébastien ; Fouzi, Yassine ; Defrance, Nicolas ; Lacam, Cédric ; Michel, Nicolas ; El Bondry, Nadia ; Oualli, Mourad ; Teisseire, Laurent ; Jacquet, Jean-Claude ; Piotrowicz, Stéphane ; Gaquiere, Christophe ; Delage, Sylvain L.

Applied physics letters, 2024-07, Vol.125 (1) [Revista revisada por pares]

Melville: American Institute of Physics

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8
Enhanced terahertz spin transmittance in the NiO/Pt structure through interface engineering
Enhanced terahertz spin transmittance in the NiO/Pt structure through interface engineering
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Enhanced terahertz spin transmittance in the NiO/Pt structure through interface engineering

Tian, Da ; Huang, Lin ; Qiu, Hongsong ; Zhang, Caihong ; Wu, Jingbo ; Fan, Kebin ; Wu, Di ; Song, Cheng ; Jin, Biaobing ; Chen, Jian ; Wu, Peiheng

Applied physics letters, 2024-07, Vol.125 (1) [Revista revisada por pares]

Melville: American Institute of Physics

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9
A cold-electrode metal–oxide resistive random access memory
A cold-electrode metal–oxide resistive random access memory
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A cold-electrode metal–oxide resistive random access memory

Cao, Jifang ; Chen, Bing ; Wang, Zhijiang ; Qu, Junru ; Zhao, Jiayi ; Shen, Rongzong ; Yu, Xiao ; Yu, Zhiping ; Liu, Fei

Applied physics letters, 2024-07, Vol.125 (1) [Revista revisada por pares]

Melville: American Institute of Physics

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10
Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation
Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation
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Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

Talukder, A. ; Kashem, M. ; Hafiz, M. ; Khan, R. ; Dirisaglik, F. ; Silva, H. ; Gokirmak, A.

Applied physics letters, 2024-06, Vol.124 (26) [Revista revisada por pares]

Melville: American Institute of Physics

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