Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth ParametersJoyce, Hannah J ; Wong-Leung, Jennifer ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, ChennupatiNano letters, 2010-03, Vol.10 (3), p.908-915 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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2 |
Material Type: Artigo
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Bandgap Energy of Wurtzite InAs NanowiresRota, Michele B ; Ameruddin, Amira S ; Fonseka, H. Aruni ; Gao, Qiang ; Mura, Francesco ; Polimeni, Antonio ; Miriametro, Antonio ; Tan, H. Hoe ; Jagadish, Chennupati ; Capizzi, MarioNano letters, 2016-08, Vol.16 (8), p.5197-5203 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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3 |
Material Type: Artigo
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Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature LasingGao, Qian ; Saxena, Dhruv ; Wang, Fan ; Fu, Lan ; Mokkapati, Sudha ; Guo, Yanan ; Li, Li ; Wong-Leung, Jennifer ; Caroff, Philippe ; Tan, Hark Hoe ; Jagadish, ChennupatiNano letters, 2014-09, Vol.14 (9), p.5206-5211 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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4 |
Material Type: Artigo
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Thermodynamic properties of metastable wurtzite InP nanosheetsYuan, Xiaoming ; Liu, Huan ; Liu, Shuang ; Zhang, Ruizi ; Wang, Yunpeng ; He, Jun ; Tan, Hark Hoe ; Jagadish, ChennupatiJournal of physics. D, Applied physics, 2021-12, Vol.54 (50), p.505112 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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5 |
Material Type: Artigo
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Temperature Dependence of Interband Transitions in Wurtzite InP NanowiresZilli, Attilio ; De Luca, Marta ; Tedeschi, Davide ; Fonseka, H. Aruni ; Miriametro, Antonio ; Tan, Hark Hoe ; Jagadish, Chennupati ; Capizzi, Mario ; Polimeni, AntonioACS nano, 2015-04, Vol.9 (4), p.4277-4287 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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6 |
Material Type: Artigo
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InxGa1−xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphologyAmeruddin, Amira S ; Fonseka, H Aruni ; Caroff, Philippe ; Wong-Leung, Jennifer ; Op het Veld, Roy LM ; Boland, Jessica L ; Johnston, Michael B ; Tan, Hark Hoe ; Jagadish, ChennupatiNanotechnology, 2015-05, Vol.26 (20) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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7 |
Material Type: Artigo
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Polarized Light Absorption in Wurtzite InP Nanowire EnsemblesDe Luca, Marta ; Zilli, Attilio ; Fonseka, H. Aruni ; Mokkapati, Sudha ; Miriametro, Antonio ; Tan, Hark Hoe ; Smith, Leigh Morris ; Jagadish, Chennupati ; Capizzi, Mario ; Polimeni, AntonioNano letters, 2015-02, Vol.15 (2), p.998-1005 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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8 |
Material Type: Artigo
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Illuminating the Second Conduction Band and Spin–Orbit Energy in Single Wurtzite InP NanowiresPerera, Saranga ; Shi, Teng ; Fickenscher, Melodie A ; Jackson, Howard E ; Smith, Leigh M ; Yarrison-Rice, Jan M ; Paiman, Suriati ; Gao, Qiang ; Tan, Hark Hoe ; Jagadish, ChennupatiNano letters, 2013-11, Vol.13 (11), p.5367-5372 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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9 |
Material Type: Artigo
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Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende HomojunctionTedeschi, Davide ; Fonseka, H. Aruni ; Blundo, Elena ; Granados del Águila, Andrés ; Guo, Yanan ; Tan, Hark H ; Christianen, Peter C. M ; Jagadish, Chennupati ; Polimeni, Antonio ; De Luca, MartaACS nano, 2020-09, Vol.14 (9), p.11613-11622 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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10 |
Material Type: Artigo
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Carrier Thermalization Dynamics in Single Zincblende and Wurtzite InP NanowiresWang, Yuda ; Jackson, Howard E ; Smith, Leigh M ; Burgess, Tim ; Paiman, Suriati ; Gao, Qiang ; Tan, Hark Hoe ; Jagadish, ChennupatiNano letters, 2014-12, Vol.14 (12), p.7153-7160 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |