Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900–1200°C temperature rangeTamariz, Sebastian ; Martin, Denis ; Grandjean, NicolasJournal of crystal growth, 2017-10, Vol.476, p.58-63 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Kinetically limited growth of GaAsBi by molecular-beam epitaxyPtak, A.J. ; France, R. ; Beaton, D.A. ; Alberi, K. ; Simon, J. ; Mascarenhas, A. ; Jiang, C.-S.Journal of crystal growth, 2012, Vol.338 (1), p.107-110 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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MBE grown Ga2O3 and its power device applicationsSasaki, Kohei ; Higashiwaki, Masataka ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuJournal of crystal growth, 2013-09, Vol.378, p.591-595 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrateSuzuki, Hidetoshi ; Ito, Daiki ; Fukuyama, Atsuhiko ; Ikari, TetsuoJournal of crystal growth, 2013-10, Vol.380, p.148-152 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxyNaritsuka, S. ; Lin, C.H. ; Uchiyama, S. ; Maruyama, T.Journal of crystal growth, 2013-09, Vol.378, p.303-306 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Energy-decreasing exponential time differencing Runge–Kutta methods for phase-field modelsFu, Zhaohui ; Yang, JiangJournal of computational physics, 2022-04, Vol.454, p.110943, Article 110943 [Periódico revisado por pares]Cambridge: Elsevier IncTexto completo disponível |
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7 |
Material Type: Artigo
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Ga-assisted MBE growth of GaAs nanowires using thin HSQ layerRieger, Torsten ; Heiderich, Sonja ; Lenk, Steffi ; Lepsa, Mihail Ion ; Grützmacher, DetlevJournal of crystal growth, 2012-08, Vol.353 (1), p.39-46 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxySemtsiv, M.P. ; Aleksandrova, A. ; Elagin, M. ; Monastyrskyi, G. ; Kischkat, J.-F. ; Flores, Y.V. ; Masselink, W.T.Journal of crystal growth, 2013-09, Vol.378, p.125-128 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Fast-response solar-blind ultraviolet photodetector with a graphene/β-Ga2O3/graphene hybrid structureAi, Meilin ; Guo, Daoyou ; Qu, Yingyu ; Cui, Wei ; Wu, Zhenping ; Li, Peigang ; Li, Linghong ; Tang, WeihuaJournal of alloys and compounds, 2017-01, Vol.692, p.634-638 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithographyBengoechea-Encabo, A. ; Albert, S. ; Sanchez-Garcia, M.A. ; López, L.L. ; Estradé, S. ; Rebled, J.M. ; Peiró, F. ; Nataf, G. ; de Mierry, P. ; Zuniga-Perez, J. ; Calleja, E.Journal of crystal growth, 2012-08, Vol.353 (1), p.1-4 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |