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Material Type: Artigo
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Impact of 100 MeV high-energy proton irradiation on β-Ga2O3 solar-blind photodetector: Oxygen vacancies formation and resistance switching effectChang, M. M. ; Guo, D. Y. ; Zhong, X. L. ; Zhang, F. B. ; Wang, J. B.Journal of applied physics, 2022-09, Vol.132 (12) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Energy minimization mechanisms of semi-coherent interfacesShao, Shuai ; Wang, J. ; Misra, AmitJournal of applied physics, 2014-07, Vol.116 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
3 |
Material Type: Artigo
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Ferroelectricity and tunneling electroresistance effect in asymmetric ferroelectric tunnel junctionsTao, L. L. ; Wang, J.Journal of applied physics, 2016-06, Vol.119 (22) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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The influence of orthophosphoric-acid surface modification on charge-storage enhancement in polypropylene electretsWang, J. ; Rychkov, D. ; Nguyen, Q. D. ; Gerhard, R.Journal of applied physics, 2020-07, Vol.128 (3) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memoryZhao, H. ; Lyle, A. ; Zhang, Y. ; Amiri, P. K. ; Rowlands, G. ; Zeng, Z. ; Katine, J. ; Jiang, H. ; Galatsis, K. ; Wang, K. L. ; Krivorotov, I. N. ; Wang, J.-P.Journal of applied physics, 2011-04, Vol.109 (7), p.07C720-07C720-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Minimum energy structures of faceted, incoherent interfacesKang, K. ; Wang, J. ; Zheng, S. J. ; Beyerlein, I. J.Journal of applied physics, 2012-10, Vol.112 (7) [Periódico revisado por pares]United States: American Institute of Physics (AIP)Texto completo disponível |
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Material Type: Artigo
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Chemical independent relaxation in metallic glasses from the nanoindentation experimentsOuyang, S. ; Huo, L. S. ; Yang, Y. ; Xu, W. ; Huo, J. T. ; Wang, J. Q. ; Wang, X. M. ; Li, R. W.Journal of applied physics, 2017-06, Vol.121 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Atomic structure variations of mechanically stable fcc-bcc interfacesKang, K. ; Wang, J. ; Beyerlein, I. J.Journal of applied physics, 2012-03, Vol.111 (5), p.053531-053531-10 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Thermal transport at the nanoscale: A Fourier's law vs. phonon Boltzmann equation studyKaiser, J. ; Feng, T. ; Maassen, J. ; Wang, X. ; Ruan, X. ; Lundstrom, M.Journal of applied physics, 2017-01, Vol.121 (4) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Gate controlled electronic transport in monolayer MoS2 field effect transistorZhou, Y. F. ; Xian, H. M. ; Wang, B. ; Yu, Y. J. ; Wei, Y. D. ; Wang, J.Journal of applied physics, 2015-03, Vol.117 (10) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |