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1
On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs
On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs
Material Type:
Artigo 		Adicionar ao Meu Espaço

On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs

Sara Dereste dos Santos Talitha Nicoletti; João Antonio Martino 1959-; Marc Aoulaiche; Anabela Veloso; Malgorzata Jurczak; Eddy Simoen; Cor Claeys

IEEE Transactions on Electron Devices v. 60, n. 1, p. 444-450, Jan 2013

2013

Item não circula. Consulte sua biblioteca.(Acessar)

2
Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation
Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation
Material Type:
Artigo 		Adicionar ao Meu Espaço

Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation

Talitha Nicoletti Sara Dereste dos Santos; João Antonio Martino 1959-; Marc Aoulaiche; Anabela Veloso; Cor Claeys; Eddy Simoen; Malgorzata Jurczak

Solid-State Electronics v. 91, p. 53-58, Jan 2014

2014

Item não circula. Consulte sua biblioteca.(Acessar)

3
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics

Sara Dereste dos Santos João Antonio Martino 1959-; B Cretu; V Strobel; J.-M Routoure; R Carin; Marc Aoulaiche; Malgorzata Jurczak; Cor Claeys

Solid-State Electronics v. 97, p. 14-22, July 2014

2014

Item não circula. Consulte sua biblioteca.(Acessar)

4
Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM
Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM
Material Type:
Artigo 		Adicionar ao Meu Espaço

Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM

Luciano Mendes Almeida Kátia Regina Akemi Sasaki; Christian Caillat; Marc Aoulaiche; Nadine Collaert; Malgorzata Jurczak; Eddy Simoen; Cor Claeys; João Antonio Martino 1959-

Solid-State Electronics Volume 90, December 2013, Pages 149-154 v. 90, p. 149-154, Dec 2013

2013

Item não circula. Consulte sua biblioteca.(Acessar)

5
On the variability of the low-frequency noise in UTBOX SOI nMOSFETs
On the variability of the low-frequency noise in UTBOX SOI nMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

On the variability of the low-frequency noise in UTBOX SOI nMOSFETs

Eddy Simoen Maria Glória Caño de Andrade; Luciano Mendes Almeida; Marc Aoulaiche; Christian Caillat; Malgorzata Jurczak; Cor Claeys; International Symposium on Microelectronics Technology and Devices (27th 2012 Brasilia)

Microelectronics technology and devices, SBMicro Pennington: Electrochemical Society, 2012

Pennington 2012

Item não circula. Consulte sua biblioteca.(Acessar)

6
Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS
Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS

Sara Dereste dos Santos Talitha Nicoletti; Marc Aoulaiche; João Antonio Martino 1959-; A Veloso; Malgorzata Jurczak; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices (27th 2012 Brasilia)

Microelectronics technology and devices, SBMicro Pennington: Electrochemical Society, 2012

Pennington 2012

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Aoulaiche, M
  2. Claeys, C
  3. Jurczak, M
  4. Martino, J
  5. Simoen, E

Neste Assunto:

  1. Microeletrônica
  2. Silício
  3. Temperatura
  4. Transistores
  5. Filmes Finos

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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