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Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance
Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance
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Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance

Dong Xu ; Kong, W.M.T. ; Xiaoping Yang ; Smith, P.M. ; Dugas, D. ; Chao, P.C. ; Cueva, G. ; Mohnkern, L. ; Seekell, P. ; Pleasant, L.Mt ; Schmanski, B. ; Duh, K.H.G. ; Karimy, H. ; Immorlica, A. ; Komiak, J.J.

IEEE electron device letters, 2008-01, Vol.29 (1), p.4-7 [Peer Reviewed Journal]

New York, NY: IEEE

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2
Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates
Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates
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Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates

AKSUN, M. I ; MORKOC, H ; LESTER, L. F ; DUH, K. H. G ; SMITH, P. M ; CHAO, P. C ; LONGERBONE, M ; ERICKSON, L. P

Applied physics letters, 1986-12, Vol.49 (24), p.1654-1655 [Peer Reviewed Journal]

Melville, NY: American Institute of Physics

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3
50-nm Asymmetrically Recessed Metamorphic High-Electron Mobility Transistors With Reduced Source-Drain Spacing: Performance Enhancement and Tradeoffs
50-nm Asymmetrically Recessed Metamorphic High-Electron Mobility Transistors With Reduced Source-Drain Spacing: Performance Enhancement and Tradeoffs
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50-nm Asymmetrically Recessed Metamorphic High-Electron Mobility Transistors With Reduced Source-Drain Spacing: Performance Enhancement and Tradeoffs

Dong Xu ; Xiaoping Yang ; Seekell, P. ; Mt. Pleasant, L. M. ; Mohnkern, Lee ; Kanin Chu ; Stedman, R. G. ; Vera, A. ; Isaak, R. ; Schlesinger, L. L. ; Carnevale, R. A. ; Duh, K. H. G. ; Smith, P. M. ; Chao, P. C.

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.128-138 [Peer Reviewed Journal]

New York, NY: IEEE

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4
Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications
Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications
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Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications

Dong Xu ; Xiaoping Yang ; Kong, W M T ; Seekell, P ; Louie, K ; Pleasant, L ; Mohnkern, L ; Dugas, D M ; Kanin Chu ; Karimy, H F ; Duh, K H G ; Smith, P M ; Chao, P C

IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1408-1417 [Peer Reviewed Journal]

New York, NY: IEEE

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5
0.1- \mu \text Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers
0.1- \mu \text Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers
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0.1- \mu \text Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers

Dong Xu ; Chu, K. K. ; Diaz, J. A. ; Ashman, M. ; Komiak, J. J. ; Pleasant, L. Mt ; Creamer, C. ; Nichols, K. ; Duh, K. H. G. ; Smith, P. M. ; Chao, P. C. ; Dong, L. ; Ye, Peide D.

IEEE electron device letters, 2015-05, Vol.36 (5), p.442-444 [Peer Reviewed Journal]

IEEE

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6
DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs
DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs
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DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs

Chao, P.-C. ; Shur, M.S. ; Tiberio, R.C. ; Duh, K.H.G. ; Smith, P.M. ; Ballingall, J.M. ; Ho, P. ; Jabra, A.

IEEE transactions on electron devices, 1989-03, Vol.36 (3), p.461-473 [Peer Reviewed Journal]

New York, NY: IEEE

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7
W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
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W-band low-noise InAlAs/InGaAs lattice-matched HEMTs

Chao, P.C. ; Tessmer, A.J. ; Duh, K.-H.G. ; Ho, P. ; Kao, M.-Y. ; Smith, P.M. ; Ballingall, J.M. ; Liu, S.-M.J. ; Jabra, A.A.

IEEE electron device letters, 1990-01, Vol.11 (1), p.59-62 [Peer Reviewed Journal]

New York, NY: IEEE

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8
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
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Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor

Henderson, T. ; Aksun, M.I. ; Peng, C.K. ; Morkoc, H. ; Chao, P.C. ; Smith, P.M. ; Duh, K.-H.G. ; Lester, L.F.

IEEE electron device letters, 1986-12, Vol.7 (12), p.649-651 [Peer Reviewed Journal]

Legacy CDMS: IEEE

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9
Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs
Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs
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Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs

Kao, M.-Y. ; Smith, P.M. ; Ho, P. ; Chao, P.-C. ; Duh, K.H.G. ; Jabra, A.A. ; Ballingall, J.M.

IEEE electron device letters, 1989-12, Vol.10 (12), p.580-582 [Peer Reviewed Journal]

New York, NY: IEEE

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10
Ultra-low noise characteristics of millimeter-wave high electron mobility transistors
Ultra-low noise characteristics of millimeter-wave high electron mobility transistors
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Ultra-low noise characteristics of millimeter-wave high electron mobility transistors

Duh, K.-H.G. ; Liu, S.-M.J. ; Lester, L.F. ; Chao, P.C. ; Smith, P.M. ; Das, M.B. ; Lee, B.R. ; Ballingall, J.

IEEE electron device letters, 1988-10, Vol.9 (10), p.521-523 [Peer Reviewed Journal]

New York, NY: IEEE

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