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1 |
Material Type: Artigo
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0+-0- Crossings in Electric Fields—A Possibility for Detecting Parity Violation in HeliumOppen, G. VEurophysics letters, 1990-01, Vol.11 (1), p.25-30 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
2 |
Material Type: Artigo
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0.02-wavelengths-thick transmission-type designer wave plate with high efficiencyXu, Peng ; Jiang, Wei Xiang ; Cai, Xiao ; Wang, Zheng Xing ; Cui, Tie JunJournal of physics. D, Applied physics, 2019-09, Vol.52 (37), p.375105 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
3 |
Material Type: Artigo
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0.05-3 GHz VNA characterization of soil dielectric properties based on the multiline TRL calibrationLewandowski, Arkadiusz ; Szyp owska, Agnieszka ; Kafarski, Marcin ; Wilczek, Andrzej ; Barmuta, Pawe ; Skierucha, WojciechMeasurement science & technology, 2017-02, Vol.28 (2), p.24007 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
4 |
Material Type: Artigo
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0.05 MU-M (3-SIGMA) OVERLAY ACCURACY THROUGH-THE-LENS ALIGNMENT IN AN EXCIMER LASER LITHOGRAPHY SYSTEMHIGASHIKI, T ; TOJO, T ; TAKAHASHI, Y ; TABATA, M ; NISHIZAKA, T ; KUWABARA, O ; UCHIDA, N ; YOSHINO, H ; SAITO, SJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, Vol.31 (12B), p.4161-4166 [Periódico revisado por pares]MINATO-KU TOKYO: JAPAN J APPLIED PHYSICSTexto completo disponível |
5 |
Material Type: Artigo
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0.05 μm (3σ) overlay accuracy through-the-lens alignment in an excimer laser lithography system: MicroProcessHIGASHIKI, T ; TOJO, T ; TAKAHASHI, Y ; TABATA, M ; NISHIZAKA, T ; KUWABARA, O ; UCHIDA, N ; YOSHINO, H ; SAITO, SJapanese journal of applied physics, 1992, Vol.31 (12B), p.4161-4166 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
6 |
Material Type: Artigo
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0.05-μm-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effectsENOKI, T ; TOMIZAWA, M ; UMEDA, Y ; ISHII, YJapanese Journal of Applied Physics, 1994, Vol.33 (1B), p.798-803 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
7 |
Material Type: Artigo
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0.1-MU M-GATE METAMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ON GaAs AND ITS APPLICATION TO SOURCE-COUPLED FIELD-EFFECT TRANSISTOR LOGICOhshima, T ; Moriguchi, H ; Hoshi, S ; Itoh, M ; Tsunotani, M ; Ichioka, TJapanese Journal of Applied Physics, Part 1, 2003, Vol.42 (6A), p.3320-3323 [Periódico revisado por pares]Texto completo disponível |
8 |
Material Type: Artigo
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0.1 ps resolution delay circuit for waveform measurement in the stroboscopic scanning electron microscopeFujioka, H ; Kunizawa, H ; Ura, KJournal of physics. E, Scientific instruments, 1986-12, Vol.19 (12), p.1025-1026London: IOP PublishingTexto completo disponível |
9 |
Material Type: Artigo
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0.1 V 13 GHz Transformer-Based Quadrature Voltage-Controlled Oscillator with a Capacitor Coupling Technique in 90 nm Complementary Metal Oxide SemiconductorKamimura, Tatsuya ; Lee, Sang-yeop ; Tanoi, Satoru ; Ito, Hiroyuki ; Ishihara, Noboru ; Masu, KazuyaJapanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.04DE04-04DE04-6 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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0.1 μm Fine-pattern fabrication using variable-shaped electron beam lithographyHASHIMOTO, K ; YASUDA, M ; HIRAI, Y ; KAWAKITA, K ; NOMURA, N ; MURATA, KJapanese journal of applied physics, 1989, Vol.28 (12), p.L2281-L2283 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |