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1-kV vertical Ga2O3 field-plated Schottky barrier diodes
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
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1-kV vertical Ga2O3 field-plated Schottky barrier diodes

Konishi, Keita ; Goto, Ken ; Murakami, Hisashi ; Kumagai, Yoshinao ; Kuramata, Akito ; Yamakoshi, Shigenobu ; Higashiwaki, Masataka

Applied physics letters, 2017-03, Vol.110 (10) [Peer Reviewed Journal]

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2
On-demand generation of background-free single photons from a solid-state source
On-demand generation of background-free single photons from a solid-state source
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On-demand generation of background-free single photons from a solid-state source

Schweickert, Lucas ; Jöns, Klaus D. ; Zeuner, Katharina D. ; Covre da Silva, Saimon Filipe ; Huang, Huiying ; Lettner, Thomas ; Reindl, Marcus ; Zichi, Julien ; Trotta, Rinaldo ; Rastelli, Armando ; Zwiller, Val

Applied physics letters, 2018-02, Vol.112 (9) [Peer Reviewed Journal]

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3
Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers
Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers
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Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers

Guo, Yu ; Zhou, Si ; Bai, Yizhen ; Zhao, Jijun

Applied physics letters, 2017-04, Vol.110 (16) [Peer Reviewed Journal]

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4
The efficiency limit of CH3NH3PbI3 perovskite solar cells
The efficiency limit of CH3NH3PbI3 perovskite solar cells
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The efficiency limit of CH3NH3PbI3 perovskite solar cells

Sha, Wei E. I. ; Ren, Xingang ; Chen, Luzhou ; Choy, Wallace C. H.

Applied physics letters, 2015-06, Vol.106 (22) [Peer Reviewed Journal]

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5
Oxygen vacancies: The (in)visible friend of oxide electronics
Oxygen vacancies: The (in)visible friend of oxide electronics
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Oxygen vacancies: The (in)visible friend of oxide electronics

Gunkel, F. ; Christensen, D. V. ; Chen, Y. Z. ; Pryds, N.

Applied physics letters, 2020-03, Vol.116 (12) [Peer Reviewed Journal]

Melville: American Institute of Physics

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6
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
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Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

Gong, Cheng ; Zhang, Hengji ; Wang, Weihua ; Colombo, Luigi ; Wallace, Robert M. ; Cho, Kyeongjae

Applied physics letters, 2013-07, Vol.103 (5) [Peer Reviewed Journal]

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7
Revisiting lattice thermal transport in PbTe: The crucial role of quartic anharmonicity
Revisiting lattice thermal transport in PbTe: The crucial role of quartic anharmonicity
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Revisiting lattice thermal transport in PbTe: The crucial role of quartic anharmonicity

Xia, Yi

Applied physics letters, 2018-08, Vol.113 (7) [Peer Reviewed Journal]

United States: American Institute of Physics (AIP)

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8
Placing single atoms in graphene with a scanning transmission electron microscope
Placing single atoms in graphene with a scanning transmission electron microscope
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Placing single atoms in graphene with a scanning transmission electron microscope

Dyck, Ondrej ; Kim, Songkil ; Kalinin, Sergei V. ; Jesse, Stephen

Applied physics letters, 2017-09, Vol.111 (11) [Peer Reviewed Journal]

United States: American Institute of Physics (AIP)

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9
Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitride
Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitride
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Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitride

Mackoit-Sinkevičienė, M. ; Maciaszek, M. ; Van de Walle, C. G. ; Alkauskas, A.

Applied physics letters, 2019-11, Vol.115 (21) [Peer Reviewed Journal]

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10
Active materials by four-dimension printing
Active materials by four-dimension printing
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Active materials by four-dimension printing

Ge, Qi ; Qi, H. Jerry ; Dunn, Martin L.

Applied physics letters, 2013-09, Vol.103 (13), p.131901 [Peer Reviewed Journal]

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