Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diodeSharma, R. ; Pattison, P. M. ; Masui, H. ; Farrell, R. M. ; Baker, T. J. ; Haskell, B. A. ; Wu, F. ; DenBaars, S. P. ; Speck, J. S. ; Nakamura, S.Applied physics letters, 2005-12, Vol.87 (23) [Periódico revisado por pares]Texto completo disponível |
2 |
Material Type: Artigo
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Growth and characterization of bulk InGaN films and quantum wellsKeller, S. ; Keller, B. P. ; Kapolnek, D. ; Abare, A. C. ; Masui, H. ; Coldren, L. A. ; Mishra, U. K. ; Den Baars, S. P.Applied physics letters, 1996-05, Vol.68 (22), p.3147-3149 [Periódico revisado por pares]Texto completo disponível |
3 |
Material Type: Artigo
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Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistancesChakraborty, Arpan ; Shen, L. ; Masui, H. ; DenBaars, S. P. ; Mishra, U. K.Applied physics letters, 2006-05, Vol.88 (18) [Periódico revisado por pares]Texto completo disponível |
4 |
Material Type: Artigo
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Interdigitated multipixel arrays for the fabrication of high-powerlight-emitting diodes with very low series resistancesChakraborty, Arpan ; Shen, L. ; Masui, H. ; DenBaars, S. P. ; Mishra, U. K.Applied physics letters, 2006-05, Vol.88 (18), p.181120-181120-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
5 |
Material Type: Artigo
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Demonstration of a semipolar ( 10 1 ¯ 3 ¯ ) In Ga N ∕ Ga N green light emitting diodeSharma, R. ; Pattison, P. M. ; Masui, H. ; Farrell, R. M. ; Baker, T. J. ; Haskell, B. A. ; Wu, F. ; DenBaars, S. P. ; Speck, J. S. ; Nakamura, S.Applied physics letters, 2005-11, Vol.87 (23), p.231110-231110-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
6 |
Material Type: Artigo
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Prospective emission efficiency and in-plane light polarizationof nonpolar m -plane In x Ga 1 − x N ∕ Ga N blue light emitting diodesfabricated on freestanding GaN substratesKoyama, T. ; Onuma, T. ; Masui, H. ; Chakraborty, A. ; Haskell, B. A. ; Keller, S. ; Mishra, U. K. ; Speck, J. S. ; Nakamura, S. ; DenBaars, S. P. ; Sota, T. ; Chichibu, S. F.Applied physics letters, 2006-08, Vol.89 (9), p.091906-091906-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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Nonresonant Energy Transfer from Er3+ to Yb3+ in LaF3Okamoto, Eichi ; Masui, Hiromitsu ; Muto, Katsutoshi ; Awazu, KenzoApplied physics letters, 1972-04, Vol.20 (8), p.299-301 [Periódico revisado por pares]Texto completo disponível |
8 |
Material Type: Artigo
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Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystalsOnuma, T. ; Saito, S. ; Sasaki, K. ; Goto, K. ; Masui, T. ; Yamaguchi, T. ; Honda, T. ; Kuramata, A. ; Higashiwaki, M.Applied physics letters, 2016-03, Vol.108 (10) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
9 |
Material Type: Artigo
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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substratesHigashiwaki, Masataka ; Sasaki, Kohei ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuApplied physics letters, 2012-01, Vol.100 (1) [Periódico revisado por pares]Texto completo disponível |
10 |
Material Type: Artigo
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Band alignment and electrical properties of Al2O3/ β -Ga2O3 heterojunctionsKamimura, Takafumi ; Sasaki, Kohei ; Hoi Wong, Man ; Krishnamurthy, Daivasigamani ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu ; Higashiwaki, MasatakaApplied physics letters, 2014-05, Vol.104 (19) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |