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Refinado por: Nome da Publicação: Microelectronics And Reliability remover
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Reliability prediction of FinFET FPGAs by MTOL
Reliability prediction of FinFET FPGAs by MTOL
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Reliability prediction of FinFET FPGAs by MTOL

Bender, E. ; Bernstein, J.B. ; Bensoussan, A.

Microelectronics and reliability, 2020-11, Vol.114, p.113809, Article 113809 [Periódico revisado por pares]

Elsevier Ltd

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2
Analysis of radiation-induced transient errors on 7 nm FinFET technology
Analysis of radiation-induced transient errors on 7 nm FinFET technology
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Analysis of radiation-induced transient errors on 7 nm FinFET technology

Azimi, S. ; De Sio, C. ; Sterpone, L.

Microelectronics and reliability, 2021-11, Vol.126, p.114319, Article 114319 [Periódico revisado por pares]

Elsevier Ltd

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3
Vulnerability evaluation on 16 nm FinFET Ultrascale+ MPSoC using fault injection and proton irradiation
Vulnerability evaluation on 16 nm FinFET Ultrascale+ MPSoC using fault injection and proton irradiation
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Vulnerability evaluation on 16 nm FinFET Ultrascale+ MPSoC using fault injection and proton irradiation

Li, Yonghong ; Yang, Weitao ; Wang, Maocheng ; Li, Yang ; Guo, Yaxin ; Li, Pei ; Zhao, Haoyu ; He, Chaohui ; Wang, Di ; Yang, Ye ; Zhang, Xiaodong ; An, Heng

Microelectronics and reliability, 2022-06, Vol.133, p.114534, Article 114534 [Periódico revisado por pares]

Elsevier Ltd

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4
Characterization of single-event transients induced by high LET heavy ions in 16 nm bulk FinFET inverter chains
Characterization of single-event transients induced by high LET heavy ions in 16 nm bulk FinFET inverter chains
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Characterization of single-event transients induced by high LET heavy ions in 16 nm bulk FinFET inverter chains

Chi, Yaqing ; Wu, Zhenyu ; Huang, Pengcheng ; Sun, Qian ; Liang, Bin ; Zhao, Zhenyu

Microelectronics and reliability, 2022-03, Vol.130, p.114490, Article 114490 [Periódico revisado por pares]

Elsevier Ltd

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5
A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance
A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance
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A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance

Khodabakhsh, Amir ; Fallahnejad, Mohammad ; Vadizadeh, Mahdi

Microelectronics and reliability, 2024-01, Vol.152, p.115278, Article 115278 [Periódico revisado por pares]

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6
Analysis of total ionizing dose response of optimized fin geometry workfunction modulated SOI-FinFET
Analysis of total ionizing dose response of optimized fin geometry workfunction modulated SOI-FinFET
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Analysis of total ionizing dose response of optimized fin geometry workfunction modulated SOI-FinFET

Ray, Abhishek ; Naugarhiya, Alok ; Mishra, Guru Prasad

Microelectronics and reliability, 2022-07, Vol.134, p.114549, Article 114549 [Periódico revisado por pares]

Elsevier Ltd

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7
Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies
Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies
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Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies

Almeida, R.B. ; Marques, C.M. ; Butzen, P.F. ; Silva, F.R.G. ; Reis, R.A.L. ; Meinhardt, C.

Microelectronics and reliability, 2018-09, Vol.88-90, p.196-202 [Periódico revisado por pares]

Elsevier Ltd

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8
A comparative radiation analysis of reconfigurable memory technologies: FinFET versus bulk CMOS
A comparative radiation analysis of reconfigurable memory technologies: FinFET versus bulk CMOS
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A comparative radiation analysis of reconfigurable memory technologies: FinFET versus bulk CMOS

Azimi, S. ; De Sio, C. ; Portaluri, A. ; Rizzieri, D. ; Sterpone, L.

Microelectronics and reliability, 2022-11, Vol.138, p.114733, Article 114733 [Periódico revisado por pares]

Elsevier Ltd

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9
Failure analysis on 14 nm FinFET devices with ESD CDM failure
Failure analysis on 14 nm FinFET devices with ESD CDM failure
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Failure analysis on 14 nm FinFET devices with ESD CDM failure

Shaalini, C. ; Tan, P.K. ; Zhao, Y.Z. ; Liu, B.H. ; Ma, Y.Z. ; Quah, A. ; Pan, Y.L. ; Tan, H. ; Mai, Z.H.

Microelectronics and reliability, 2018-09, Vol.88-90, p.321-333 [Periódico revisado por pares]

Elsevier Ltd

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10
Optimal sampling for accelerated testing in 14 nm FinFET ring oscillators
Optimal sampling for accelerated testing in 14 nm FinFET ring oscillators
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Optimal sampling for accelerated testing in 14 nm FinFET ring oscillators

Hsu, Shu-Han ; Huang, Ying-Yuan ; Wu, Yi-Da ; Yang, Kexin ; Lin, Li-Hsiang ; Milor, Linda

Microelectronics and reliability, 2020-11, Vol.114, p.113753, Article 113753 [Periódico revisado por pares]

Elsevier Ltd

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